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| 1 | Tunable Reactive Wetting of Sn on Microporous Cu Layer显示文摘Wetting of microporous Cu layer by liquid Sn resulted in contact angles from 0 to 33 deg., tunable by varying wetting temperature and porous microstructure. The wetting was dominated by the interfacial metallurgical reaction, which can lead to pore closure phenomenon, as the liquid infiltration facilitating the wetting process. | Qingquan Lai Lei Zhang Cai Chen J.K.Shang | 2012 | Journal of Materials Science & Technology2012，28，4： | 1 |
| 2 | Solderability of Electrodeposited Fe-Ni Alloys with Eutectic SnAgCu Solder显示文摘有 SnAgCu 的合金焊接的 electrodeposited Fe-Ni 的可焊度被弄湿平衡大小检验,当弄湿的力量和动力学在纯 Ni.However 上接近了或超过那些,与那些相比,纯 Ni 和纯 Fe platings.Excellent ,可焊度在 Ni-52Fe plating 上被发现,在到 75 at.pct 的 Fe 内容的另外的增加之后,尽管它仍然比纯 Fe plating 的好,合金的可焊度严重地被降级。X 光检查光电子光谱学证明 Fe 内容上的可焊度的如此的强壮的依赖与 Ni 富有的 plating 表面的薄得多的、不完全的氧化物范围有关。 | Jianjun GUO Lei ZHANG Aiping XIAN J.K.Shang | 2007 | Journal of Materials Science & Technology2007，23，6： | 0 |
| 3 | Synthesis of Single-Crystal TiO_2 Nanowire Using Titanium Monoxide Powder by Thermal Evaporation显示文摘TiO 2 nanowires were synthesized successfully in a large quantity by thermal evaporation using titanium monoxide powder as precursor. X-ray diffraction results showed that all the products were pure rutile phase of TiO 2 . According to microstructural observations, the nanowires have two typical morphologies, a long straight type and a short tortuous type. The straight nanowires were obtained at a wide temperature range of 900-1050 ℃, while the tortuous ones were formed below 900 ℃. Transmission electron microscopy characterization revealed that both the straight and the tortuous nanowires are single-crystal rutile TiO 2 . The preferential growth direction of the nanowires was determined as [110] orientation according to electron diffraction and high-resolution image analyses. The morphological change of TiO 2 nanowires was discussed by considering the different atomic diffusion rates of Ti atoms caused by the phase transformation in Ti substrate at around 900 ℃. | Z.G.Shang Z.Q.Liu P.J.Shang J.K.Shang | 2012 | Journal of Materials Science & Technology2012，28，5： | 0 |
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