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您的检索式：作者名="JOHN TOLLE"
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| 1 | Electrically injected GeSn lasers with peak wavelength up to 2.7 μm显示文摘GeSn lasers enable the monolithic integration of lasers on the Si platform using all-group-Ⅳ direct-bandgap material.The GeSn laser study recently moved from optical pumping into electrical injection.In this work,we present explorative investigations of GeSn heterostructure laser diodes with various layer thicknesses and material compositions.Cap layer material was studied by using Si_(0.03)Ge_(0.89)Sn_(0.08) and Ge_(0.95)Sn_(0.05),and cap layer total thickness was also compared.The 190 nm SiGeSn-cap device had threshold of 0.6 kA/cm^(2) at 10 K and a maximum operating temperature(T_(max)) of 100 K,compared to 1.4 kA/cm^(2) and 50 K from 150 nm SiGeSn-cap device,respectively.Furthermore,the 220 nm GeSn-cap device had 10 K threshold at 2.4 kA/cm^(2) and T_(max) at 90 K,i.e.,higher threshold and lower maximal operation temperature compared to the SiGeSn cap layer,indicating that enhanced electron confinement using SiGeSn can reduce the threshold considerably.The study of the active region material showed that device gain region using Ge_(0.87)Sn_(0.13) had a higher threshold and lower T_(max),compared to Ge_(0.89)Sn_(0.11).The performance was affected by the metal absorption,free carrier absorption,and possibly defect density level.The maximum peak wavelength was measured as 2682 nm at 90 K by using Ge_(0.87)Sn_(0.13) in gain regions.The investigations provide directions to the future GeSn laser diode designs toward the full integration of group-Ⅳ photonics on a Si platform. | YIYIN ZHOU SOLOMON OJO CHEN-WEI WU YUANHAO MIAO HUONG TRAN JOSHUA MGRANT GREY ABERNATHY SYLVESTER AMOAH JAKE BASS GREGORY SALAMO WEI DU GUO-EN CHANG JIFENG LIU JOE MARGETIS JOHN TOLLE YONG-HANG ZHANG GREG SUN RICHARD ASOREF BAOHUA LI SHUI-QING YU | 2022 | Photonics Research2022，10，1： | 0 |
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