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您的检索式：作者名="Jiamang Che"
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| 1 | Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes显示文摘It is well known that the p-type AlGaN electron blocking layer(p-EBL) can block hole injection for deep ultraviolet light-emitting diodes(DUV LEDs). The polarization induced electric field in the p-EBL for [0001] oriented DUV LEDs makes the holes less mobile and thus further decreases the hole injection capability. Fortunately,enhanced hole injection is doable by making holes lose less energy, and this is enabled by a specifically designed p-EBL structure that has a graded AlN composition. The proposed p-EBL can screen the polarization induced electric field in the p-EBL. As a result, holes will lose less energy after going through the proposed p-EBL, which correspondingly leads to the enhanced hole injection. Thus, an external quantum efficiency of 7.6% for the 275 nm DUV LED structure is obtained. | ZI-HUI ZHANG JIANQUAN KOU SUNG-WEN HUANG CHEN HUA SHAO JIAMANG CHE CHUNSHUANG CHU KANGKAI TIAN YONGHUI ZHANG WENGANG BI HAO-CHUNG KUO | 2019 | Photonics Research2019，7，4： | 4 |
| 2 | Polarization-enhanced AlGaN solar-blind ultraviolet detectors显示文摘AlGaN solar-blind ultraviolet detectors have great potential in many fields,although their performance has not fully meet the requirements until now.Here,we proposed an approach to utilize the inherent polarization effect of AlGaN to improve the detector performance.AlGaN heterostructures were designed to enhance the polarization field in the absorption layer,and a high built-in field and a high electron mobility conduction channel were formed.As a result,a high-performance solar-blind ultraviolet detector with a peak responsivity of 1.42 A/W at 10 V was achieved,being 50 times higher than that of the nonpolarization-enhanced one.Moreover,an electron reservoir structure was proposed to further improve the performance.A higher peak responsivity of 3.1 A/W at30 V was achieved because the electron reservoir structure could modulate the electron concentration in the conduction channel.The investigation presented here provided feasible approaches to improve the performance of the AlGaN detector by taking advantage of its inherent property. | Ke Jiang Xiaojuan Sun Zi-Hui Zhang Jianwei Ben Jiamang Che Zhiming Shi Yuping Jia Yang Chen Shanli Zhang Wei Lv Dabing Li | 2020 | Photonics Research2020，8，7： | 3 |
| 3 | Polarization assisted self-powered GaN-based UV photodetector with high responsivity显示文摘In this work, a self-powered GaN-based metal-semiconductor-metal photodetector(MSM PD) with high responsivity has been proposed and fabricated. The proposed MSM PD forms an asymmetric feature by using the polarization effect under one electrode, such that we adopt an AlGaN/GaN heterojunction to produce the electric field,and by doing so, an asymmetric energy band between the two electrodes can be obtained even when the device is unbiased. The asymmetric feature is proven by generating the asymmetric current-voltage characteristics both in the dark and the illumination conditions. Our results show that the asymmetric energy band enables the selfpowered PD, and the peak responsivity wavelength is 240 nm with the responsivity of 0.005 A/W. Moreover, a high responsivity of 13.56 A/W at the applied bias of 3 V is also achieved. Thanks to the very strong electric field in the charge transport region, when compared to the symmetric MSM PD, the proposed MSM PD can reach an increased photocurrent of 100 times larger than that for the conventional PD, even if the illumination intensity for the light source becomes increased. | JIAXING WANG CHUNSHUANG CHU KANGKAI TIAN JIAMANG CHE HUA SHAO YONGHUI ZHANG KE JIANG ZI-HUI ZHANG XIAOJUAN SUN DABING LI | 2021 | Photonics Research2021，9，5： | 1 |
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