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2篇 您的检索式:作者名="Jucheol Park"
    题名 作者 年代 出处 被引量
1Enhanced efficiency in lead-free bismuth iodide with post treatment based on a hole-conductor-free perovskite solar cell显示文摘Despite the excellent merits of lead perovskite solar cells,their instability and toxicity still present a bottleneck for practical applications.Bismuth perovskite has emerged as a candidate for photovoltaic (PV) applications,because it not only has a low toxicity but is also stable in air.However,the power conversion efficiency (PCE) remains an unsolved problem.We performed band gap tuning experiments to improve the efficiency.The absorption of ABi3I10 structure films was extended within the visible region,and the optical band gap was decreased considerably compared to that for Cs3Bi2I9.Furthermore,we explained the correlation between the structure and the optical properties via a first-principles study.A device employing CsBi3I10 as a photoactive layer exhibits a PCE of 1.51% and an excellent ambient stability over 30 days.Jongmoon Shin Maengsuk Kim Sujeong Jung Chang Su Kim Jucheol Park Aeran Song Kwun-Bum Chung Sung-Ho Jin Jun Hee Lee Myungkwan Song 2018Nano Research2018,11,12:4
2Significant control of metal-insulator transition temperature through catalytic excessive oxygen doping in high-performance vanadium dioxide nanobeam channel显示文摘The strategy of a reliable transition temperature control of vanadium dioxide(VO2)is reported.Rectangular VO2 nanobeams were synthesized by a thermal chemical vapor deposition(TCVD)system.The metal-insulator transition(MIT)temperature increases to above 380K when the TiO2 ratio of the source is 5 at.%,although the Ti source is not physically doped into VO2 nanobeams.The XPS spectra of the V 2p orbital reveal the excessive oxidation of V after the TCVD processes with a higher TiO2 ratio,indicating that the TiO2 precursor is important in the O-doping of the surface V O bonds when forming volatile Ti-O gas species.Thus,TiO2 reactants can be used as a VO2 surface chemical modifier to manipulate the MIT transition temperature and maintain a homogenous VO2 phase,which is useful for a Mott device application with a record on/off switching ratio>104 and Mott transition temperature>380 K.Minhwan Ko Sang Yeon Lee Jucheol Park Hyungtak Seo 2020Journal of Materials Science & Technology2020,44,9:0
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