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| 1 | Predictive modelling of ferroelectric tunnel junctions显示文摘Ferroelectric tunnel junctions combine the phenomena of quantum-mechanical tunnelling and switchable spontaneous polarisation of a nanometre-thick ferroelectric film into novel device functionality.Switching the ferroelectric barrier polarisation direction produces a sizable change in resistance of the junction—a phenomenon known as the tunnelling electroresistance effect.From a fundamental perspective,ferroelectric tunnel junctions and their version with ferromagnetic electrodes,i.e.,multiferroic tunnel junctions,are testbeds for studying the underlying mechanisms of tunnelling electroresistance as well as the interplay between electric and magnetic degrees of freedom and their effect on transport.From a practical perspective,ferroelectric tunnel junctions hold promise for disruptive device applications.In a very short time,they have traversed the path from basic model predictions to prototypes for novel non-volatile ferroelectric random access memories with non-destructive readout.This remarkable progress is to a large extent driven by a productive cycle of predictive modelling and innovative experimental effort.In this review article,we outline the development of the ferroelectric tunnel junction concept and the role of theoretical modelling in guiding experimental work.We discuss a wide range of physical phenomena that control the functional properties of ferroelectric tunnel junctions and summarise the state-of-the-art achievements in the field. | Julian P Velev John D Burton Mikhail Ye Zhuravlev Evgeny Y Tsymbal | 2016 | npj Computational Materials2016，，1： | 2 |
| 2 | Phase Transitions and Anion Exchange in All-Inorganic Halide Perovskites显示文摘CONSPECTUS:A new generation of semiconducting materials based on metal halide perovskites has recently been launched into the scientific spotlight,exhibiting outstanding optoelectronic properties and providing promise for the development of efficient optical devices.As a vivid example,solar cells made from these materials have quickly reached conversion efficiencies exceeding 25%,now on par with well-established technologies,like silicon.Their widespread success is due,in part,to a unique ability to retain high-quality optoelectronic performance while being easily solutionprocessed into thin films.This feature is what defines them as a brand-new class of optoelectronic materials,with the ability to compete with traditional semiconductors requiring higher processing costs,like the III−Vs or II−IVs.However,the interesting photophysics of metal halide perovskites come with a catch;their soft ionic lattice promotes complex thermal-induced phase transitions and a high capacity for postsynthetic compositional changes,e.g.,halide anion exchange.Such dynamic behavior has ultimately made understanding several important structure−property relationships ambiguous and obstructed a clear path toward commercialization due to inherent phase instability.Our aim in this Account is to highlight the fundamental aspects of metal halide perovskites that dictate a stable crystal structure and enable efficient anion exchange,through the lens of thermodynamic preference and phase formation energies.Taking the allinorganic CsPbI3‑xBrx system as a suitable case study,we focus on several ways in which its thermodynamically unstable perovskite structure can be maintained at room temperature and elucidate the restructuring pathways taken during destabilization.In addition,we will discuss the origin and mechanisms of postsynthetic anion exchange in CsPbX3(X=I,Br,Cl)perovskites,with emphasis made toward direct visualization using in situ optical microspectroscopy and arriving at quantitative results.For several notable features of halide perovskites dealt with in this Account,e.g.,strain stabilization,nonperovskite phase restructuring pathway,and lattice anion diffusion,we attempt to rationalize them using state-of-the-art materials modeling techniques.It is within this spirit that we not only modify a broad range of properties existing within metal halide perovskites but also regulate them for enhanced material functionality.For example,controlling partial phase changes and local replacement of halide composition in CsBX3(B=Pb,Sn and X=I,Br,Cl)nanowires can facilitate the formation of optoelectronic heterojunctions,due to the abrupt change in local crystal structure and the correlated transition in optoelectronic properties.From this combined perspective,metal halide perovskites appear as highly dynamic systems,whereby structural and compositional modifications have a large impact on the underlying phase stability and optoelectronic properties.Thus,we highlight several scientific aspects important to the fundamental understanding of metal halide perovskites,ranging from the underlying mechanism and kinetics through which phase destabilization and anion exchange take place,to tuning the thermodynamic energy landscape using external stimuli.We anticipate that providing a clear perspective for these topics will help deepen our knowledge of the nature of ionic semiconductors and provide the stimulus required to build new research directions toward utilizing halide perovskites within versatile optoelectronic devices. | Julian A.Steele Minliang Lai Ye Zhang Zhenni Lin Johan Hofkens Maarten B.J.Roeffaers Peidong Yang | 2020 | Accounts of Materials Research2020，1，1： | 2 |
| 3 | Simultaneous detection and characterization of toxigenic Clostridium difficile directly from clinical stool specimens显示文摘我们采用了结合的复合聚合酶链反应(PCR ) 指向六的毛状的电气泳动(mPCR-CE ) 在为 toxigenic C 的同时的察觉和描述的 tcdC 的 Clostridium 顽固基因,包括的 tpi, tcdA, tcdB, cdtA, cdtB,和删除。顽固直接从烘便的标本。mPCR-CE 每反应有 10 个形成殖民地的单位的察觉的限制没有与另外的相关细菌的基因跨反应。临床的确认在 354 上被执行连续地与怀疑的 C 从病人收集了凳子标本。顽固感染并且 45 孤立。结果与与 BD 最大 Cdiff,即时房间分析试金(RTCA ) ,和 mPCR-CE 相结合的一个参考标准相比。toxigenic C。顽固种类在 36 被检测孤立并且由 mPCR-CE 的 45 个凳子标本,它提供了 20.3% 的积极的率(81/399 ) 。mPCR-CE 有 97.2% 的特性和 96.0% 的敏感,它比 RTCA 高(x 2= 5.67, P = 0.017 ) 但是比 BD 最大 Cdiff 低(P = 0.245 ) 。在 45 紧张之中,(97.8%) 44 作为 non-ribotype 被决定 027 由 mPCR-CE,它充分被适合于 PCR ribotyping。尽管 ribotypes 017 (n = 8, 17.8%) , 001 (n = 6, 13.3%) ,并且 012 (n = 7, 15.6%) 在这个区域是占优势的, ribotype 027 重要遗传型习惯性地被监视。mPCR-CE 为 toxigenic C 的同时的察觉提供了一个其他的诊断工具。在凳子顽固、在 RT027 和 non-RT027 之间潜在地区分。 | Hanjiang Lai Chen Huang Jian Cai Julian Ye Jun She Yi Zheng Liqian Wang Yelin Wei Weijia Fang Xianjun Wang Yi-Wei Tang Yun Luo Dazhi Jin | 2018 | Frontiers of Medicine2018，12，2： | 2 |
| 4 | Increased connectivity of hiPSC-derived neural networks in multiphase granular hydrogel scaffolds显示文摘To reflect human development,it is critical to create a substrate that can support long-term cell survival,differentiation,and maturation.Hydrogels are promising materials for 3D cultures.However,a bulk structure consisting of dense polymer networks often leads to suboptimal microenvironments that impedes nutrient exchange and cell-to-cell interaction.Herein,granular hydrogel-based scaffolds were used to support 3D human induced pluripotent stem cell(hiPSC)-derived neural networks.A custom designed 3D printed toolset was developed to extrude hyaluronic acid hydrogel through a porous nylon fabric to generate hydrogel granules.Cells and hydrogel granules were combined using a weaker secondary gelation step,forming self-supporting cell laden scaffolds.At three and seven days,granular scaffolds supported higher cell viability compared to bulk hydrogels,whereas granular scaffolds supported more neurite bearing cells and longer neurite extensions(65.52±11.59μm)after seven days compared to bulk hydrogels(22.90±4.70μm).Long-term(three-month)cultures of clinically relevant hiPSC-derived neural cells in granular hydrogels supported well established neuronal and astrocytic colonies and a high level of neurite extension both inside and beyond the scaffold.This approach is significant as it provides a simple,rapid and efficient way to achieve a tissue-relevant granular structure within hydrogel cultures. | Chia-Chen Hsu Julian H.George Sharlayne Waller Cyril Besnard David A Nagel Eric J Hill Michael D.Coleman Alexander M.Korsunsky Zhanfeng Cui Hua Ye | 2022 | Bioactive Materials2022，7，3： | 1 |
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