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您的检索式：作者名="Junxi Duan"
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| 1 | Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer显示文摘High-quality AlN layers with low-density threading dislocations are indispensable for high-efficiency deep ultraviolet light-emitting diodes(UV-LEDs). In this work, a high-temperature AlN epitaxial layer was grown on sputtered AlN layer(used as nucleation layer, SNL) by a high-yield industrial metalorganic vapor phase epitaxy(MOVPE). The full width half maximum(FWHM) of the rocking curve shows that the AlN epitaxial layer with SNL has good crystal quality. Furthermore, the relationships between the thickness of SNL and the FWHM values of(002) and(102) peaks were also studied. Finally, utilizing an SNL to enhance the quality of the epitaxial layer, deep UV-LEDs at 282 nm were successfully realized on sapphire substrate by the high-yield industrial MOVPE. The light-output power(LOP) of a deep UV-LED reaches 1.65 mW at 20 mA with external quantum efficiency of 1.87%. In addition, the saturation LOP of the deep UV-LED is 4.31 mW at an injection current of 60 mA. Hence, our studies supply a possible process to grow commercial deep UV-LEDs in high throughput industrial MOVPE, which can increase yield, at lower cost. | Zejie Du Ruifei Duan Tongbo Wei Shuo Zhang Junxi Wang Xiaoyan Yi Yiping Zeng Junxue Ran Jinmin Li Boyu Dong | 2017 | Journal of Semiconductors2017，38，11： | 1 |
| 2 | Weakened interlayer coupling in two-dimensional MoSe2 flakes with screw dislocations显示文摘The screw dislocations are intriguing defects that are often observed in natural and artificial materials. The dislocation spirals break the reflection and inversion symmetries of the lattices and modify the interlayer coupling in layer-structured materials, inducing additional complexity in layer stacking and thus novel properties in materials. Here, we report on the interlayer coupling of two-dimensional (2D) MoSe2 flakes with screw dislocations by atomic force microscopy (AFM), Raman spectra and photoluminescence (PL) spectra. By controlling the supersaturation conditions, 2D MoSe2 flakes with screw dislocations are grown on amorphous SiO2 substrates by chemical vapor deposition (CVD). AFM measurements reveal that the interlayer spacing in such 2D MoSe2 flakes with screw dislocation is slightly widened with respect to the normal AA- or AB-stacked ones due to the presence of the screw dislocations. Raman and PL spectra show that the interlayer coupling is weaker and thus the band gap is wider than that in the normal AA- or AB-stacked ones. Our work demonstrates that the interlayer coupling of 2D transition metal dichalcogenides (TMDCs) flakes can be tuned by the induction of screw dislocations, which is very helpful for developing novel catalysts and electronic devices. | Xiangzhuo Wang Huixia Yang Rong Yang Qinsheng Wang Jingchuan Zheng Lu Qiao Xianglin Peng Yongkai Li Dongyun Chen Xiaolu Xiong Junxi Duan Guangyu Zhang Jie Ma Junfeng Han Wende Xiao Yugui Yao | 2019 | Nano Research2019，12，8： | 1 |
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