| 2 | Van der Waals epitaxial growth and optoelectronics of a vertical MoS_(2)/WSe_(2)p-n junction显示文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs)have attracted extensive attention due to their unique electronic and optical properties.In particular,TMDs can be fexibly combined to form diverse vertical van der Waals(vdWs)heterostructures without the limitation of lattice matching,which creates vast opportunities for fundamental investigation of novel optoelectronic applications.Here,we report an atomically thin vertical p-n junction WSe_(2)/MoS_(2)produced by a chemical vapor deposition method.Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties.Back gate feld efect transistor(FET)constructed using this p-n junction exhibits bipolar behaviors and a mobility of 9 cm^(2)/(V·s).In addition,the photodetector based on MoS_(2)/WSe_(2)heterostructures displays outstanding optoelectronic properties(R=8 A/W,D^(*)=2.93×10^(11)Jones,on/of ratio of 10^(4)),which benefted from the built-in electric feld across the interface.The direct growth of TMDs p-n vertical heterostructures may ofer a novel platform for future optoelectronic applications. | Yu Xiao Junyu Qu Ziyu Luo Ying Chen Xin Yang Danliang Zhang Honglai Li Biyuan Zheng Jiali Yi Rong Wu Wenxia You Bo Liu Shula Chen Anlian Pan | 2022 | Frontiers of Optoelectronics2022，15，4： | 0 |
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