| 1 | Pulsed laser deposited Al-doped ZnO thin films for optical applications显示文摘Highly transparent and conducting Al-doped Zn O(Al:Zn O) thin films were grown on glass substrates using pulsed laser deposition technique.The profound effect of film thickness on the structural, optical and electrical properties of Al:Zn O thin films was observed. The X-ray diffraction depicts c-axis, plane(002) oriented thin films with hexagonal wurtzite crystal structure. Al-doping in Zn O introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:Zn O thin films are important for applications such as transparent electromagnetic interference(EMI) shielding materials and solar cells. The obtained optical band gap(3.2–3.08 e V) was found to be less than pure Zn O(3.37 e V) films. The lowering in the band gap in Al:Zn O thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:Zn O thin films for light emitting devices(LEDs) applications. The current–voltage(I–V) measurements show the ohmic behavior of the films with resistivity(ρ) 10-3Ω cm. | Gurpreet Kaur Anirban Mitra K.L.Yadav | 2015 | Progress in Natural Science:Materials International2015，25，1： | 2 |
| 2 | Mo^(6+)Modified(K_(0.5)Na_(0.5))NbO_3 Lead Free Ceramics:Structural,Electrical and Optical Properties显示文摘Lead free polycrystailine ceramics(K_(0.5)Na_(0.5))Nb_((1-x))Mo_xO_3(x=0,0.02,0.04,0.06 and 0.08)have been synthesized via solid state reaction method.The formation of single phase perovskite structure up to 6 mol%of Mo^(6+)has been confirmed by X-ray diffraction pattern.Impedance spectroscopy reveals that bulk resistance decreases with increasing temperature,which indicates negative temperature coefficient of resistance(NTCR)behaviour of the compounds.The diffuse reflectance spectroscopy results indicate a red shift of the band gap energy of K_(0.5)Na_(0.5)NbO_3(KNN,from 4.28 to 3.61 eV)with increasing Mo^(6+)concentration due to structural modification.The photoluminescence spectra of doped samples are composed of two emission bands at room temperature.One emission band is near band edge ultraviolet(UV)emission(~354 nm)and other is visible emission band(~397 nm)which may explore the possibility of these ceramics to be used in optical device applications. | Jyoti Rani Piyush Kumar Patel Nidhi Adhlakha Hemant Singh K.L.Yadav Satya Prakash | 2014 | Journal of Materials Science & Technology2014，30，5： | 0 |
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