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32篇 您的检索式：作者名="KAMINS T I"

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	题名	作者	年代	出处	被引量
1	Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si显示文摘	Kamins T I Stanley Williams R Chang Y L	2000	Appl Phys Lett2000，76，5：	2
2	Growth and structure of chemically vapor deposited Ge nanowires on Si substrates显示文摘	Kamins T I Li X Williams R S	2004	Nano Lett2004，4，3：	1
3	Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si 显示文摘	Kamins T I Williams R S Chen Y Chang Y L Chang Y A	2000	Applied Physics Letters2000，76，：	1
4	A model for conduction in polycrystalline silicon-part Ⅰ: Theory 显示文摘	Mandurah M M Saraswat K C Kamins T I	1981	IEEE Trans Electron Devices1981，，28：	1
5	Growth and Use of Metal Nanocrystal Assemblies on High-Density Silicon Nanowires Formed by Chemical Vapor Deposition显示文摘	Sharma S Kamins T I	2006	Appl Phys A2006，82，：	1
6	Structure and properties of LPCVD silicon films 显示文摘	Kamins T I	1980	J Electrochem Soc1980，127，33：	1
7	Structure of chemically deposited polycrystalIine-silicon films显示文摘	KAMINS T I CASS T R	1973	Thin Solid Films1973，16，2：	1
8	Photosensing arrays with improved spatial resolution显示文摘	KAMINS T I FONG G T	1978	IEEE Trans Electron Devices1978，25，：	1
9	Admittance spec-troscopy measurements of band offsets in Se/Si1-xGex/Si heterostructures显示文摘	Nauka K Kamins T I Turner J E		0，，02：	1
10	Ti-catalyzed Si nanowires by chemical vapor deposition:Microscopy and growth mechanisms显示文摘	KAMINS T I WILLIAMS R S BASILE D P HESIEDAL T HARRIS J S	2001	Journal of Applied Physics2001，89，2：	1
11	Chemical Vapor Depositison of Si Nanowires Nucleated by TiSi2 Islands on Si显示文摘	William R S Chen Y	2000	Appl Phys Latt2000，76，5：	1
12	A model for conduction in polycrystalline silicon-Part h theory 显示文摘	Mandurah M M Saraswat K C Kamins T I	1981	IEEE Trans Electr Dev1981，28，10：	1
13	Surface photovoltage measurement of hydrogen-treated Si surfaces 显示文摘	NAUKA K KAMINS T I	1999	Journal of the Electrochemical Society1999，146，1：	1
14	A model for conduction in polycrystalline silicon-Part 1:Theory 显示文摘	Sarawat K C Kamins T I	1981	IEEE Trans1981，28，10：	1
15	X-ray diffraction analysis of step-graded InxGa1-xAs buffer layers grown by MBE显示文摘	Lin H Huo Y J Rong Y W Chen R Kamins T I Harris J S		0，，01：	1
16	Silicon nanowires for sequence-specific DNA sensing: device fabrication and simulation显示文摘	LI Zhiyong RAJENDRAN B KAMINS T I	2005	Appl Phys A2005，80，6：	1
17	Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes显示文摘	Medeiros Ribeiro G Bratkovski A M Kamins T I Ohlherg D A A Williams R S	1998	Science1998，279，：	1
18	Lithographic positioning of self-assembled Ge islands on Si(001)显示文摘	Kamins T I Williams R S	1997	Applied Physics Letters1997，71，：	1
19	显示文摘	Kamins T I	1971	J Appl Phys1971，42，：	1
20	Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si显示文摘	Kamins T I Williams R S Chen Y	2000	Appl Phys Lett2000，76，5：	1

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