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您的检索式：作者名="KENNETH ENG KIAN LEE"
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| 1 | A review of silicon-based wafer bonding processes,an approach to realize the monolithic integration of Si-CMOS and III-V-on-Si wafers显示文摘The heterogeneous integration of III-V devices with Si-CMOS on a common Si platform has shown great promise in the new generations of electrical and optical systems for novel applications,such as HEMT or LED with integrated control circuitry.For heterogeneous integration,direct wafer bonding(DWB)techniques can overcome the materials and thermal mismatch issues by directly bonding dissimilar materials systems and device structures together.In addition,DWB can perform at wafer-level,which eases the requirements for integration alignment and increases the scalability for volume production.In this paper,a brief review of the different bonding technologies is discussed.After that,three main DWB techniques of single-,double-and multi-bonding are presented with the demonstrations of various heterogeneous integration applications.Meanwhile,the integration challenges,such as micro-defects,surface roughness and bonding yield are discussed in detail. | Shuyu Bao Yue Wang Khaw Lina Li Zhang Bing Wang Wardhana Aji Sasangka Kenneth Eng Kian Lee Soo Jin Chua Jurgen Michel Eugene Fitzgerald Chuan Seng Tan Kwang Hong Lee | 2021 | Journal of Semiconductors2021，42，2： | 5 |
| 2 | Properties of a vector soliton laser passively mode-locked by a fiber-based semiconductor saturable absorber operating in transmission显示文摘 | Chunmei Ouyang Honghai Wang Ping Shum Songnian Fu Jia Haur Wong Kan Wu Desmond Rodney Chin Siong Lim Vincent Kwok Huei Wong Kenneth Eng Kian Lee | 2010 | Optics Communications2010，，2： | 1 |
| 3 | High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator显示文摘High-performance GaInP/AlGaInP multi-quantum well light-emitting diodes(LEDs) grown on a low threading dislocation density(TDD) germanium-on-insulator(GOI) substrate have been demonstrated. The low TDD of the GOI substrate is realized through Ge epitaxial growth, wafer bonding, and layer transfer processes on 200 mm wafers. With O_2 annealing, the TDD of the GOI substrate can be reduced to ~1.2 × 10~6 cm^(-2). LEDs fabricated on this GOI substrate exhibit record-high optical output power of 1.3 mW at a 670 nm peak wavelength under 280 mA current injection. This output power level is at least 2 times higher compared to other reports of similar devices on a silicon(Si) substrate without degrading the electrical performance. These results demonstrate great promise for the monolithic integration of visible-band optical sources with Si-based electronic circuitry and realization of high-density RGB(red, green, and blue) micro-LED arrays with control circuitry. | YUE WANG BING WANG WARDHANA A. SASANGKA SHUYU BAO YIPING ZHANG HILMI VOLKAN DEMIR JURGEN MICHEL KENNETH ENG KIAN LEE SOON FATT YOON EUGENE A. FITZGERALD CHUAN SENG TAN KWANG HONG LEE | 2018 | Photonics Research2018，6，4： | 0 |
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