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34篇 您的检索式：作者名="KURAGUCHI M"

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	题名	作者	年代	出处	被引量
1	Recessedgate structure approach toward normally off high- voltage AIGaN/GaN HEMT for power electronics applications 显示文摘	Saito W Takada Y Kuraguchi M	2006	IEEE Trans Electron Devices2006，53，2：	1
2	High break-down voltage AlGaN-GaN power-HEMT design andhigh current density switching behavior 显示文摘	Saito W Takada Y Kuraguchi M?	2003	IEEETrans Electron Devices2003，50，：	1
3	High breakdown voltage A1GaN/GaN power HEMT design and high current density switching behavior 显示文摘	SSITO W TAKADA Y KURAGUCHI M	2003	IEEE TED2003，50，12：	1
4	Adenomatous polyposis coli (apc) is required for normal development of skin and thymus 显示文摘	Kuraguchi M Wang XP Bronson RT	2006	PLoS Genet2006，2，9：	1
5	Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications显示文摘	SAITO W TAKADA Y KURAGUCHI M	2006	IEEE Trans on ED2006，53，2：	1
6	Design optimization of high breakdown voltage AIGaN-GaN power HEMT on an insulating substrate for RONA-VB trade off characteristics显示文摘	SAITO W KURAGUCHI M TAKADA Y	2005	IEEE Transactions on Electron Devices2005，52，1：	1
7	Mbd4 inactivation increases C→T transition mutations and promotes gastrointestinal tumor formation显示文摘	Wong E Yang K Kuraguchi M	2002	Proc Natl Acad Sci U S A2002，99，14：	1
8	Effect of buffer layer structure on drain leakage current and current collapse phenomena in high-voltage GaN-HEMTs显示文摘	SAITO W NODA T KURAGUCHI M	2009	IEEE Trans on ED2009，56，7：	1
9	Adenomatous polyposis coli (APC) is required for normal development of skin and thymus 显示文摘	Kuraguchi M Wang X P Bronson R T	2006	PLoS Genet2006，2，9：	1
10	Influence of surface defect charge at MGaN-GaN-HEMT upon schottky gate leakage current and breakdown voltage显示文摘	SAITO W KURAGUCHI M TAKADA Y	2005	IEEE Trans on ED2005，52，2：	1
11	Adenomatous polyposis coli(APC)is required for normal development of skin and thymus显示文摘	Kuraguchi M Wang XP Bronson RT	2006	PLoS Genet2006，2，9：	1
12	The distinct spectra of tumor-associated Apc mutations in mismatch repairdeficient Apc1638N mice define the roles of MSH3 and MSH6 in DNA repair and intestinal tumorigenesis显示文摘	KURAGUCHI M YANG K WONG E	2001	Cancer Res2001，61，：	1
13	Novel roles forMLH3 deficiency and TLE6-like amplification in DNA mis-match repair-deficient gastrointestinal tumorigenesis and pro-gression显示文摘	Chen PC? Kuraguchi M Velasquez J?	2008	PLoS Genet2008，4，00：	1
14	Recessedgate structure approach toward normaIly off high-voltage AlGaN/GaN HEMT for power electronics applications 显示文摘	SAITO W TAKADA Y KURAGUCHI M	2006	IEEE Tran Electron Devices2006，53，2：	1
15	Haploinsuffi- eiency of Flap endonuelease (Fenl)leads to rapid tumor progres- sion显示文摘	Kueherlapati M Yang K Kuraguchi M	2002	PNAS2002，99，：	1
16	Tumorigenesis in mlhl and mlh1/apc1638n mutant mice 显示文摘	Edelmann W Yang K Kuraguchi M	1999	Cancer Res1999，59，6：	1
17	The distinct spectra of tumor associated Apc mutations in mismatch repair- defi- cient Apc1638N mice define the roles of MSH3 and MSH6 in DNA repair and intestinal tumorigenesis显示文摘	Kuraguchi M Yang K Wong E	2001	Cancer Res2001，61，21：	1
18	The distinct spectra ot tumor-associated apc mutations in mismatch repair-deficient apc1638n mice define the roles of msh3 and msh6 in DNA repair and intestinal tumorigenesis 显示文摘	Kuraguchi M Yang K Wong E	2001	Cancer Res2001，61，21：	1
19	High break- down voltage AIGaN-GaN power-HEMT design and high current density switching behavior 显示文摘	SAITO W TAKADA Y KURAGUCHI M	2003	IEEE Transactions Electron Devices2003，50，12：	1
20	Recessedgate structure approach toward normally off high-voltage A1- GaN/GaN HEMT for power electronics applications显示文摘	SAITO W TAKADA Y KURAGUCHI M	2006	IEEE Transactions Electron Devices2006，53，2：	1

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