维普期刊资源整合服务平台（V6.5）

维普中文期刊产品整合服务

12篇 您的检索式：作者名="LEE Chiapyng"

选中清除导出查看参考文献查看引证文献引用追踪共1页首页上一页第1页下一页末页 /1 跳转

		题名	作者	年代	出处	被引量
	1	Evaluation of the thermal stability of reactively sputtered (Ti, Zr) Nc nano-thin films as diffusion barriers between Cu and Silicon显示文摘	Kuo Yu-Lin Lee Chiapyng Lin Jing-Cheng	2005	Thin Solid Films2005，484，：	1
	2	Characteristics of sputtered Ta-B-N thin films as diffusion barriers between copper and silicon显示文摘	Lin Shun tang Lee Chiapyng	2006	Appl Surf Sei2006，253，3：	1
	3	Characteristics of sputtered Ta-B-N thin films as diffusion barriers between copper and silicon显示文摘	Shun-Tang Lin Chiapyng Lee	2006	Appl Surf Sci2006，253，：	1
	4	Characterization of tantalum nitride films deposited by reactive sputtering of Ta in N2/Ar gas mixtures 显示文摘	Wen - Homg Lee Jing - Cheng Lin Chiapyng Lee	2001	Materials Chemistry and Physics2001，68，：	1
	5	Nucleation and growth of highly oriented lead titanate thin films prepared by a sol-gel method 显示文摘	Lai Yen-chao Lin Jing-cheng Chiapyng Lee	1998	Applied Surface Science1998，125，：	1
	6	Characteristics of DC reactively sputtered ( Ti, Zr) N thin films as diffusion barriers for Cu metallization 显示文摘	Kuo Yu - lin Lee Chiapyng Lin Jing - cheng	2003	Electrochemical and Solid - State Letters2003，6，9：	1
	7	Failure behavior of small outline J Lead/Sn - X ( X = AgCu or Pb )solder joints under thermal mechanical fatigue test显示文摘	Pei Lin Wu Meng Kuang Huang Chiapyng Lee	2004	Materials Chemistry and Physics2004，87，：	1
	8	Characteristics of sputtered Ta-B-N thin films as diffusion barriers between copper and silicon显示文摘	Lin Shun-Tang Lee Chiapyng	2006	Appl Surf Sci2006，253，：	1
	9	Effect of density on the diffusion barrier property of TiNx films between Cu and Si显示文摘	Wen-Horng Lee Yu-Lin Kuo Hong-Ji Huang Chiapyng Lee	2004	Materials Chemistry and Physics2004，85，23：	1
	10	The 260 ℃ phase equilibria of the Sn-Sb-Cu ternary system and inteffacial reactions at the Sn-Sb/Cu joints 显示文摘	Lee Chiapyng Lin Chung-yung Yen Yee-wen	2007	Intennetallics2007，15，：	1
	11	Effect of SiH4/CH4 flow ratio on the Growth of β-SiC on Si By Electron Cyclotron Chemical Vapor Deposition at 500 ℃显示文摘	LiuChin-Chien Lee Chiapyng	1995	Appl Phys Lett1995，66，2：	1
	12	Characteristics of Sputter-deposited Gadolinia-doped Ceria Thin Films on Al_2O_3/SiO_2/Si Systems显示文摘Metal oxide films prepared by thin film technology have been reported for the potential applications on thin solid electrolyte layers for solid oxide fuel cells(SOFCs). Gadolinia-doped ceria(GDC) thin films and Al2O3 layers on SiO2/Si substrates are successively deposited by RF reactive magnetron sputtering from a cerium-gadolinium (90:10 at.%) alloy target and Al target in O2/Ar gas mixture and then perform post-thermal treatments at 300-700 ℃ and 900 ℃ for 2 h, respectively. Materials characteristics and chemical compositions of GDC films and Al2O3 layers are investigated by X-ray photoelectron spectroscopy(XPS), cross-sectional scanning electron microscopy(SEM), X-ray diffraction(XRD), and atomic force microscopy(AFM). Stoichiometric Al2O3 layers with polycrystalline structures are firstly prepared onto SiO2/Si substrates. A cubic fluorite structure with columnar crystallites of GDC films is successfully deposited on Al2O3/SiO2/Si systems. The chemical composition of 700 ℃-annealed GDC films is (Ce0.91Gd0.09)O1.94 and possesses a higher film density of 7.257 g/cm3. As a result, GDC thin films prepared by RF reactive magnetron sputtering and post-thermal treatments can be used as thin solid electrolyte layers for intermediate temperature SOFCs system as compared to the well-known yttria-stabilized zirconia(YSZ).	KUO Yulin LEE Chiapyng CHEN Yongsiou SU Yuming LIANG Hsuang	2009	Chinese Journal of Mechanical Engineering2009，22，3：	0

返回顶部每页显示：

共1页首页上一页第1页下一页末页 /1 跳转

goolge学术搜索-维普

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1　渝公网安备 50019002500403号　违法和不良信息举报中心

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费