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		题名	作者	年代	出处	被引量
	1	Ferromagnetism of Zn_(1-x)Cu_xO Polycrystalline Made by Solid State Reaction显示文摘The Zn1-xCuxO polycrystalline materials were prepared by doping CuO into wurtzite ZnO through solid state reaction. The high concentration of copper doping in ZnO exhibited remarkable room temperature ferromagnetism. The Experiments showed that the magnetization saturation rose with the increase of Cu content. For the low Cu content sample, the hysteresis loop was slightly tilted which indicated that the diamagnetism coexisted in this sample. The temperature dependence of magnetization of Zn 1-x Cu x O revealed that the magnetic exchange coupling depended on the doping concentration of Cu and there were many different local environments for magnetism. The measured hysteresis loop and temperature dependence of magnetization were overall performance of the magnetism coming from a wide distribution of ferromagnetic exchange couplings.	毛兴宇 ZOU Weidong LIN Qiubao KE Zhijian WU Yan	2014	Journal of Wuhan University of Technology(Materials Science)2014，29，3：	0
	2	Interfacial properties of 2D WS_(2)on SiO_(2)substrate from X-ray photoelectron spectroscopy and firstprinciples calculations显示文摘Two-dimensional(2D)WS_(2)films were deposited on SiO_(2)wafers,and the related interfacial properties were investigated by high-resolution X-ray photoelectron spectroscopy(XPS)and first-principles calculations.Using the direct(indirect)method,the valence band offset(VBO)at monolayer WS_(2)/SiO_(2)interface was found to be 3.97 eV(3.86 eV),and the conduction band offset(CBO)was 2.70 eV(2.81 eV).Furthermore,the VBO(CBO)at bulk WS_(2)/SiO_(2)interface is found to be about 0.48 eV(0.33 eV)larger due to the interlayer orbital coupling and splitting of valence and conduction band edges.Therefore,the WS_(2)/SiO_(2)heterostructure has a Type I energy-band alignment.The band offsets obtained experimentally and theoretically are consistent except the narrower theoretical bandgap of SiO_(2).The theoretical calculations further reveal a binding energy of 75 meV per S atom and the totally separated partial density of states,indicating a weak interaction and negligible Fermi level pinning effect between WS_(2)monolayer and SiO_(2)surface.Our combined experimental and theoretical results provide proof of the sufficient VBOs and CBOs and weak interaction in 2D WS_(2)/SiO_(2)heterostructures.	Changjie Zhou Huili Zhu Weifeng Yang Qiubao Lin Tongchang Zheng Lan Yang Shuqiong Lan	2022	Frontiers of physics2022，17，5：	0

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