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您的检索式：作者名="LIU PengQiang"
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| 1 | Resi- due behaviour of six pesticides in button crimini dur- ing home canning显示文摘 | DU Pengqiang LIU Xingang GU Xiaojun | 2014 | Food Additives&Contami- nants:Part A2014，31，6： | 1 |
| 2 | Rapid residue analysis of pyriproxyfen? avermectins and diflubenzuronin mushrooms by ultra-performance liquid chromatography coupled with tandem mass spectrometry 显示文摘 | DU Pengqiang LIU Xingang GU Xiaojun | 2013 | AnalMethods2013，5，： | 1 |
| 3 | Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology显示文摘Dear editor,Ge has been considered as a very promising candidate as a channel material of MOSFET to extend Moore’s law beyond sub-7 nm node, due to its high and symmetric mobility, as well as the compatibility with conventional Si process [1, 2].In spite of higher carrier mobility than Si, there are still several challenges for Ge MOSFETs, such as low electrical concentration of n-type dopants and high electron Schottky barrier height, resulting in large source/drain (S/D) series resistance. | Bingxin ZHANG Xia AN Pengqiang LIU Xiangyang HU Ming LI Xing ZHANG Ru HUANG | 2018 | Science China(Information Sciences)2018，61，10： | 1 |
| 4 | Ge surface passivation by GeO_2 fabricated by N_2O plasma oxidation显示文摘In this paper, Ge surface passivation by Ge O2 grown by N2 O plasma oxidation is presented and experimentally demonstrated. Results show that stoichiometrically Ge O2 can be achieved by N2 O plasma oxidation at 350°C. The transmission electron microscope observation reveals that the Ge O2/Ge interface is automatically smooth and the thickness of Ge O2is~0.9 nm with 120 s N2 O plasma oxidation. The interface state density of Ge surface after N2 O plasma passivation is about~3×1011 cm-2e V-1. With Ge O2 passivation,the hysteresis of MOS capacitor with Al2O3 as gate dielectric is reduced to~55 m V, compared to 130 m V of the untreated one. The Fermi-level at Ge O2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage, which is promising for high performance NMOSFETs fabrication. | LIN Meng AN Xia LI Ming YUN QuanXin LI Min LI Zhi Qiang LIU PengQiang ZHANG Xing HUANG Ru | 2015 | Science China(Information Sciences)2015，58，4： | 1 |
| 5 | Residue behaviour of six pesticides in button crimini during home canning显示文摘 | DU Pengqiang LIU Xingang GU Xiaojun | 2014 | Food Additives and Contaminants: Part A2014，31，6： | 1 |
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