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| 1 | Fabrication of large area hexagonal boron nitride thin films for bendable capacitors显示文摘高度可靠、可弯曲的电介质为未来应用在灵活或可弯曲的电子设备被需要。六角形的硼氮化物(h-BN ) 能由于它的宽乐队差距被用作可弯曲的电介质。这里,我们由一个低压力化学药品蒸汽免职方法与可控制的厚度制作高质量的 h-BN 电影。我们作为电介质用 h-BN 电影表明一个平行板的电容器。h-BN 电容器与 9.0 MV/cm 的高故障地力量是可靠的。越过 h-BN 电影的通道电流对电介质的厚度相反地指数,它让电容显著地落下。h-BN 电容器显示出 6.8 F/cm2 的一个最好的特定的电容,它比计算的值高一个数量级。 | Ning Guo Jinquan Wei Yi Jia Huanhuan Sun Yuhang Wang Kehan Zhao Xiaolan Shi Liuwan Zhang Xinming Li Anyuan Cao Hongwei Zhu Kunlin Wang Dehai Wu | 2013 | Nano Research2013，6，8： | 3 |
| 2 | UV illumination enhanced desorption of oxygen molecules from monolayer MoS2 surface显示文摘The oxygen adsorption can drastically alter the electronic properties of the two-dimensional(2D)materials,which is usually dificult to be removed.In this work,we report the ultraviolet(UV)ilumination induced desorption of the O2 molecules from the monolayer MoS2 surface by using the atmosphere dependent transport measurement,Kelvin probe microscopy,photoluminescence spectroscopy and X-ray photoelectron spectroscopy.Obvious increasing of the conductivity,rising of the Fermi level,and red shift of the photoluminescence peaks of the MoS2 were observed after the UV ilumination in vacuum,indicating the elimination of the depletion effect from the oxygen adsorption.Such parameter changes can be reversibly recovered by the subsequent O2 exposure.Furthermore,obvious decreasing of the oxygen concentration after the UV ilumination was also observed by X-ray photoelectron spectroscopy.Thus the UV induced O2 photodesorption effect is evidenced.The photo-excited charge transfer mechanism is proposed to account for the photodesorption effect.These results provide a nondestructive way to clean the MoS2 surface and manipulate the performance of the MoS2 based devices. | Yuhang Wang Zhiquan He Jinbing Zhang Hao Liu Xubo Lai Boyang Liu Yibao Chen Fengping Wang Liuwan Zhang | 2020 | Nano Research2020，13，2： | 3 |
| 3 | Magnetic and transport and dielectric properties of polycrystalline TbMnO 3显示文摘 | Yimin Cui Liuwan Zhang Guanlin Xie Rongming Wang | 2006 | Solid State Communications2006，，10： | 1 |
| 4 | Die- lectric properties of TbMnO3 ceramics 显示文摘 | Wang Chunchang Cui Yimin Zhang Liuwan | 2007 | Appl Phys Lett2007，90，1： | 1 |
| 5 | Growth of large scale PtTe,PtTe_(2) and PtSe_(2) films on a wide range of substrates显示文摘1T phase of transition metal dichalcogenides(TMDCs)formed by group 10 transition metals(e.g.Pt,Pd)have attracted increasing interests due to their novel properties and potential device applications.Synthesis of large scale thin films with controlled phase is critical especially considering that these materials have relatively strong interlayer interaction and are difficult to exfoliate.Here we report the growth of centimeter-scale PtTe,1T-PtTe2 and 1T-PtSe2 films via direct deposition of Pt metals followed by tellurization or selenization.We find that by controlling the Te flux,a hitherto-unexplored PtTe phase can also be obtained,which can be further tuned into PtTe2 by high temperature annealing under Te flux.These films with different thickness can be grown on a wide range of substrates,including NaCl which can be further dissolved to obtain free-standing PtTe2 or PtSe2 films.Moreover,a systematic thickness dependent resistivity and Hall conductivity measurements show that distinguished from the semiconducting PtSe2 with hole carriers,PtTe2 and PtTe films are metallic.Our work opens new opportunities for investigating the physical properties and potential applications of group 10 TMDC films and the new monochalcogenide PtTe film. | Kenan Zhang Meng Wang Xue Zhou Yuan Wang Shengchun Shen Ke Deng Huining Peng Jiaheng Li Xubo Lai Liuwan Zhang Yang Wu Wenhui Duan Pu Yu Shuyun Zhou | 2021 | Nano Research2021，14，6： | 1 |
| 6 | Evolution of resistive switching polarity in Au/Ar^+ bombarded SrTi_(0.993)Nb_(0.007)O_3/In sandwiches显示文摘We investigated the resistive switching characteristics of Au/Ar+bombarded SrTi 0.993 Nb0.007O3/In sandwiches.The evolution of the resistive switching polarity with sweeping voltage was observed.Our experiments showed that under a macroscopic electrode the homogeneous trapping-detrapping-type conduction and filament-type conduction coexist and compete with each other.For a large sweeping voltage range,the trapping-detrapping-type conduction dominates.However,for a small range the latter dominates. If the bias voltage is too large,the filament conduction could be destroyed.These results will help deepen the understanding of the resistive switching polarity,and will aid in future device design. | XIE GuanLin WANG YuHang REN TianLing ZHU JiaLin SUN JiaLin ZHANG LiuWan | 2012 | Chinese Science Bulletin2012，57，1： | 0 |
| 7 | Dielectric properties of spinel ceramic Fe_(1.8)V_(1.2)O_4显示文摘Spinel vanadates possess rich physics arising from the interaction among spin,orbital and lattice degrees of freedom.We report the dielectric properties of polycrystalline Fe1.8V1.2O4.A thermally activated dielectric relaxation appeared in low temperature due to the inhomogeneous conductivity between grains and grain boundaries.We found an artificial ferroelecticity in this sample.An abnormal frequency-independent dielectric peak appeared at room temperature when the samples were measured during warming in ambient air.However,this peak disappeared in the following cooling process.By dielectric frequency spectrum and equivalent circuit analysis in detail,we found the sample had a surface layer in warming but not in cooling process.We also confirmed that this surface layer was induced by the adsorption of water,which is responsible for the dielectric peak. | LIU Na WANG YuHang ZHANG LiuWan | 2012 | Chinese Science Bulletin2012，57，36： | 0 |
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