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| 1 | Microstructure and properties of ultrafine WC-10Co composites with chemically doped VC显示文摘Vanadium carbide is the most effective grain growth inhibitor for ultrafine WC-Co composites due to its high solubility and mobility in the cobalt phase at relatively low temperatures;however,there are still some debates over the best way to introduce it into the WC-Co formulation.In this paper,the differences between admixed and chemically doped grain growth inhibitors on the microstructural development and properties of an ultrafine WC-10Co composite are discussed.The densification rate of chemically doped samples is slower in the early stage of sintering and the WC grain sizes of the sintered alloys are finer than those of admixed samples,leading to the increase of hardness and transverse rupture strength of the sintered alloys.The effectiveness of the chemically doped inhibitor is attributed to the formation of vanadium rich layers on the surfaces of tungsten carbide powders during reduction and carbonization,which alters the surface and interface energies of WC grains,impedes the contact with each other of WC grains and contributes to the resistance to W diffusion across the layer during sintering,resulting in the inhibition of nanosized particle coalescence. | PANG Cholsong LUO Ji GUO Zhimeng | 2011 | Rare Metals2011，30，2： | 6 |
| 2 | Synthesis of nanosized tungsten carbide from phenol formaldehyde resin coated precursors显示文摘Nanosized 钨碳化物从酚甲醛树脂(PF ) 被综合涂的钨先锋。这个过程有 nanosized 钨粒子是第一的三在步与 PF 涂,然后,先锋在 950 点被使渗碳# | LUO Ji GUO Zhimeng GAO Yuxi LIN Tao | 2008 | Rare Metals2008，27，2： | 4 |
| 3 | Consolidation and properties of ultrafine binderless cemented carbide by spark plasma sintering显示文摘由于金属文件夹的缺席,无文件夹的 cemented 碳化物更高有穿,腐蚀,和氧化抵抗。有 200 nm 的一种平均粒子尺寸和活跃元素的小数量的 WC-0.3VC- 0.5Cr3C2 粉末被火花血浆 sintering 巩固。sintered 微观结构表明平均 WC 谷物尺寸是 0.24 m,它与起始的好粉末几乎一致。XRD 的结果证明那个 W2C 阶段被形成。极其细小的无文件夹的 cemented 碳化物的将近完全的 densification 被 sintering 在 1400 点完成 ? 鞌 ? | LIU Xiangqing LIN Tao Shao Huiping GUO Zhimeng LUO Ji HAO Junjie | 2008 | Rare Metals2008，27，3： | 2 |
| 4 | Stability condition of FAST TCP in high speed network on the basis of control theory显示文摘Considering the instability of data transferred existing in high speed network,a new method is pro-posed for improving the stability using control theory.Under this method,the mathematical model of such a network is established.Stability condition is derived from the mathematical model.Several simulation experiments are performed.The results show that the method can increase the stability of data transferred in terms of the congestion window,queue size,and sending rate of the source. | Zhao Fuzhe Zhou Jianzhong Luo Zhimeng Xiao Yang | 2008 | Journal of Systems Engineering and Electronics2008，19，4： | 1 |
| 5 | Synthesis of nanosized tungsten powder显示文摘Nanosized tungsten powder was synthesized by means of different methods and under different conditions with nanosized WO3 powder. The powder and the intermediate products were characterized using XRD, SEM, TEM, BET (Brunauer Emmett Teller Procedure) and SAXS (X-ray diffracto-spectrometer/Kratky small angle scattering goniometer). The results show that nanosized WO3 can be completely reduced to WO2 at 600℃ after 40 min, and WO2 can be reduced to W at 700℃ after 90 min, moreover, the mean size of W particles is less than 40 nm. Furthermore, the process of WO3→WO2→W excelled that of WO3→W in getting stable nanosized tungsten powder with less grain size. | Guangfeng Lu Junjie Hao Zhimeng Guo Ruizhu Zhang Ji Luo Liying Zhang | 2005 | Journal of University of Science and Technology Beijing2005，12，4： | 1 |
| 6 | Characterization of nanometer tungsten powders显示文摘钨粉末的三种类型被三先锋粉末的氢减小在低温度准备,它被用作样品,并且然后被 Brunauer-Emmer-Teller (赌注)方法描绘,扫描电子显微镜学( SEM ),传播电子显微镜学( TEM ),散布的小角度X光检查(萨克斯风管),和分别地扫描电子显微镜学( FESEM )的地排放。结果证明尽管赌, SEM 不能描绘纳米粉末的粒子尺寸,他们是帮助的重要工具排除非纳米粉末。TEM 和 FESEM 能直接测量纳米粉末的粒子尺寸,但是这需要很多时间,到计数平均粒子尺寸和粒子尺寸分发。萨克斯风管不能描述凝块的状态。由 FESEM 和萨克斯风管的联合,纳米的粒子尺寸,粒子尺寸分发,和粒子形状搽粉能精确被描绘。 | LI Huiqian LIN Tao SHAO Huiping WU Chengyi GUO Zhimeng LUO Ji | 2008 | Rare Metals2008，27，2： | 0 |
| 7 | Size- and shape-controlled synthesis of monodisperse Co nanoparticles from cobalt acetate by thermal decomposition显示文摘Monodisperse cobalt nanoparticles with relatively high coercivities were synthesized by thermal decomposition of cobalt acetate for the application of ultra-high density magnetic recording media. Without using any reducing agent, Co nanoparticles of 13.9-21.3 nm in size were prepared using various protecting agents and a high boiling point solvent trioctylamine. The Co nanoparticles prepared with the mixture of oleic acid, oleylamine, and polyvinylpyrrolidone (PVP) showed clear crystalline structure of face centered cubic, and their coercivity was measured to be 27.2 kA/m. PVP was effective in controlling particle growth while hindering agglomeration between the particles. The as-prepared Co nanoparticles with a moderate coercivity can be applicable to patterned media. | LIN Tao SHAO Huiping GUO Zhimeng LUO Ji HAO Junjie | 2009 | Rare Metals2009，28，3： | 0 |
| 8 | P-doped Germanium Nanowires with Fanobroadening in Raman Spectrum显示文摘The optimized growth conditions for high density germanium(Ge) nanowires and P-doped Ge nanowires on Si(111) substrate were investigated,the phosphorus(P)-doping in Ge nanowires was also characterized.Vapor liquid solid-low pressure chemical vapor deposition(VLS-LPCVD) of Ge nanowires was conducted with different thicknesses of Au film as catalyst,different flow rates of GeH_4 as precursor and PH_3/Ar as co-flow.The morphologies of the Ge nanowires were characterized by scanning electron microscopy(SEM),the P-doping was verified by micro Raman spectroscopy via measuring the P local vibrational peak(342-345 cm^(-1)) and asymmetric broadening of Ge-Ge vibrational peak(about 300 cm^(-1),respectively.The characterization results show that 1 run thickness of Au catalyst is the most suitable condition among thicknesses of 0.1,1,5,and 10 nm for the growth of high density Ge nanowires at 300 and 350℃,and 0.5 sccm is the best flow rate of PH_3/Ar to grow high density and large scale P-doped Ge nanowires among flow rates of 0.5,1 and 2sccm.The P impurity can be doped into Ge nanowires effectively during LPCVD process at 350 ℃. | 何亮 xiong biao zhou peng luo wen song peishuai wang xukun hao zhimeng yang xiao niu chaojiang tian xiaocong yan mengyu 麦立强 | 2016 | Journal of Wuhan University of Technology(Materials Science)2016，31，1： | 0 |
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