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6篇 您的检索式:作者名="M Donoval"
    题名 作者 年代 出处 被引量
1A contribution to the analysis of the I-V characteristics of Schottky structures 显示文摘DONOVAL D BROBNY V LUZA M 1998Sol Sta Elec1998,42,2:1
2A Contribution to the Analysis of the I-V Characteristics of Sehottky Structures 显示文摘Donoval D Brohny V Luza M 1998Solid State Electronics1998,42,2:1
3Analysis of I-V measurements on PtSi-Si Schottky structures in a wide temperature range 显示文摘DONOVAL D BARUS M ZDIMAL M 1991SSE1991,34,12:1
4查看详情显示文摘Racko J Donoval D Barus M Nagl V. Grmanova A 0,,07:1
5A contribution to the analysis of the I-V characteristics of Schottky structures显示文摘Donoval D Brobny V Luza M 1998Solid-State Electronics1998,42,2:1
6Hunting down the ohmic contact of organic field-effect transistor显示文摘We report properties of contact resistances observed on pentacene organic field-effect transistors(OFET) with four different source/drain electrodes, namely, copper(Cu), gold(Au), silver(Ag), and germanium(Ge). The metals were selected to provide a wide range of energy barriers for charge injection, from blocking contact to smooth injection. All OFETs exhibited strong voltage dependence of the contact resistance, even for devices with smooth injection, which is in strong disagreement with the definition of ohmic contacts. A comparison with current crowding, resistive network, Fowler–Nordheim tunneling, and electric field enhanced thermionic injection(Schottky emission) pointed to importance of local electric fields and/or electrostatic field charges.M Micjan M Novota P Telek M Donoval M Weis 2019Chinese Physics B2019,28,11:0
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