维普中文期刊产品整合服务
1篇 您的检索式:作者名="M. Dobrowolska"
    题名 作者 年代 出处 被引量
1Interlayer exchange coupling in (Ga,Mn) As ferromagnetic semiconductor multilayer systems显示文摘This paper describes interlayer exchange coupling (IEC) phenomena in ferromagnetic multilayer structures, focusing on the unique IEC features observed in ferromagnetic semiconductor (Ga,Mn)As-based systems. The dependence of IEC on the structural parameters, such as non-magnetic spacer thickness, number of magnetic layers, and carrier density in the systems has been investigated by using magnetotransport measurements. The samples in the series show both a typical anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR)-like effects indicating realization of both ferromagnetic (FM) and antiferromagnetic (AFM) IEC in (Ga,Mn)As-based multilayer structures. The results revealed that the presence of carriers in the nonmagnetic spacer is an important factor to realize AFM IEC in this system. The studies further reveal that the IEC occurs over a much longer distance than predicted by current theories, strongly suggesting that the IEC in (Ga,Mn)As-based multilayers is a long-range interaction. Due to the long-range nature of IEC in the (Ga,Mn)As-based systems, the next nearest neighbor (NNN) IEC cannot be ignored and results in multi-step transitions during magnetization reversal that correspond to diverse spin configurations in the system. The strength of NNN IEC was experimentally determined by measuring minor loops that correspond to magnetization flips in specific (Ga,Mn)As layer in the multilayer system.Sanghoon Lee Sunjae Chung Hakjoon Lee Xinyu Liu M. Dobrowolska J. K. Furdyna 2019Journal of Semiconductors2019,40,8:0
返回顶部 每页显示:
共1页 首页 上一页 第1页 下一页 末页 /1 跳转

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1 渝公网安备 50019002500403号 违法和不良信息举报中心

互联网出版许可证 新出网证(渝)字10号 全国400电话 - 免长途话费