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2篇 您的检索式：作者名="MARKUS BOSUND"

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		题名	作者	年代	出处	被引量
	1	Properties of AIN grown by plasma enhanced atomic lay- er deposition 显示文摘	Markus Bosund Timo Sajavaara Mikko Laitinen	2011	Applied Surface Science2011，257，17：	1
	2	ATOMIC LAYER DEPOSITION HfO_(2)FILM USED AS BUFFER LAYER OF THE Pt/(Bi_(0.95)Nd_(0.05))(Fe_(0.95)Mn_(0.05))O_(3)/HfO_(2)/Si CAPACITORS FOR FeFET APPLICATION显示文摘Neodymium and manganese doped BiFeO_(3)-(Bi_(0.95)Nd_(0.05))(Fe_(0.95)Mn_(0.05))O_(3)(BNFMO)ferro-electric film and HfO_(2)layer with different thickness were fabricated using metal-organic decomposition and atomic layer deposition(ALD)method,respectively.Metal ferroelectric-insulator-semiconductor(MFIS)capacitors with 200 nm thick BNFMO and 5 nm thick HfO_(2)layer on silicon substrate have been prepared and characterized.It is found that there is no distinct interdifusion and reaction occurring at the interface between BNFMO/HfO_(2)and HfO_(2)/Si.The capacitance-voltage(C-V)and leakage current properties of Pt/HfO_(2)/Si capacitors with different HfO_(2)thickness were studied.The MFIS structure showed clockwise C-V hysteresis loops due to the ferroelectric polarization of BNFMO.The maximum memory window is 5 V.The.leakage current of the Pt/BNFMO/HfO_(2)/Si capacitor was about 2.1×10^(-6)A/cm^(2)at an applied voltage of 4V.	DAN XIE TINGTING FENG YAFENG LUO XUEGUANG HAN TIANLING REN MARKUS BOSUND SHUO LI VELI-MATTI AIRAKSINEN HARRI LIPSANEN SEPPO HONKANEN	2011	Journal of Advanced Dielectrics2011，1，3：	0

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