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55篇 您的检索式：作者名="MASSENGILL L W"

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	题名	作者	年代	出处	被引量
1	Transient radiation upset simulations of CMOS memory circuits 显示文摘	MASSENGILL L W DIEHL S E	1984	IEEE IEEE Trans Nucl Sci1984，31，6：	1
2	Analysis of single-event effects in combinational logic-simulation of the AM2901 bitslice processor 显示文摘	MASSENGILL L W BARANSKI A E VAN NORT D O	2000	IEEE Trans Nucl Sci2000，47，6：	1
3	Rate predictions for single-event effects-Critique Ⅱ显示文摘	Petersen E L Pouget V Massengill L W	2005	Nuclear Science IEEE Transcations on2005，52，61：	1
4	The role of parasitic elements in the single- event transient response of linear circuits 显示文摘	STERNBERG A L MASSENGILL L W BUCHNER S	2002	IEEE Trans Nucl Sci2002，49，6：	1
5	Charge collection and charge sharing in a 130 nm CMOS technology 显示文摘	AMUSAN O A WITULSK! A F MASSENGILL L W et l	2006	IEEE Trans Nucl Sci2006，53，6：	1
6	Single-event transient pulse quenching in advanced CMOS logic circuits 显示文摘	AHLBIN J R MASSENGILL L W BHUVA B L	2009	IEEE Trans Nucl Sci2009，56，6：	1
7	A Hardened-by-design Technique for RF Digital Phase-locked Loops显示文摘	Loveless T D Massengill L W Bhuva B L	2006	IEEE Transactions on Nuclear Science2006，53，6：	1
8	Frequency domain analysis of'analog single-event transients in linear circuits 显示文摘	BOULGASSOUL Y MASSENGILL L W TURFLINGER T Y	2002	IEEE Trans Nucl Sci2002，49，6：	1
9	Modeling and Mitigating Single-event Transients in Vohage-controlled Oscillators显示文摘	Loveless T D Massengill L W Holman W T	2007	IEEE Transactions on Nuclear Science2007，54，6：	1
10	A Hardened-by-Design Technique for RF Digital Phase-Locked Loops显示文摘	Loveless T D Massengill L W Bhuva B L	2006	IEEE Trans on Nuclear Science2006，53，6：	1
11	Basic mechanisms and modeling of single event upset in digital microelectronics显示文摘	Dodd P E Massengill L W	2003	IEEE Trans on Nucl Sci2003，50，58：	1
12	Basic mechanisms and modeling of single event upset in digital microelectronics显示文摘	Dodd P E Massengill L W	2003	IEEE Transactions on Nucl ear Science2003，50，3：	1
13	Single-event transient pulse propagation in digital CMOS 显示文摘	Massengill L W Tuinenga P W	2004	IEEE Transactions''on Nuclear Science2004，，6：	1
14	Effects of Technology Scaling on the SET Sensitivity of RF CMOS Voltage-Controlled Oscillators显示文摘	Boulghassoul Y Massengill L W Sternberg A L	2005	IEEE Trans on Nuclear Science2005，52，6：	1
15	Dose-rate upset in a 16 k CMOS SRAM 显示文摘	MASSENGILL L W DIEHL-NAGLE S E	1986	IEEE Trans Nucl Sci1986，33，6：	1
16	A single-event-hardened phase lucked loop fabricated in 130 nm CMOS显示文摘	Loveless T D Massengill L W	2007	IEEE Transac- tions on Nuclear Scienc2007，54，6：	1
17	Analysis of transient radiation upset in a 2 k SRAM 显示文摘	MASSENGILL L W DIEHL-NAGLE S E	1985	IEEE Trans NuclSci1985，32，6：	1
18	Transient radiation upset simulation of CMOS memory circuits 显示文摘	MASSENGILL L W DIEHL-NAGLE S E	1984	IEEE Trans Nucl Sci1984，31，6：	1
19	Basic mechanisms andmodeling of single-event upset in digital microelectionics显示文摘	Dodd P E Massengill L W	2003	IEEE Trans Nucl Sci2003，50，3：	1
20	Charge collection and charge sharing in a 130 nm CMOS technology显示文摘	Amusan O A Witulski A F Massengill L W	2006	IEEE Transactions on Nuclear Science2006，53，6：	1

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