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31篇 您的检索式：作者名="MENEGHESSO G"

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	题名	作者	年代	出处	被引量
1	Reliability of visible GaN LEDs in plastic package显示文摘	MENEGHESSO G LEVADA S ZANONI E	2003	Microelectronics Reliability2003，43，911：	1
2	Analysis of DC current accelerated life tests of GaN LEDs using a Weibull-based statistical model显示文摘	LEVADA S MENEGHINI M MENEGHESSO G	2005	Device and Materials Reliability IEEE Transactions2005，5，4：	1
3	Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs显示文摘	MENEGHESSO G RAMPAZZO F KORDOS P	2006	IEEE Trans Electron Devices2006，53，12：	1
4	Surface-related drain current dispersion effects in AlGaN-GaN HEMTs显示文摘	Meneghesso G Verzellesi G Pierobon R	2004	IEEE Trans Elec Dev2004，51，10：	1
5	Reliability analysis of GaN-Based LEDs for solid state illumination显示文摘	MENEGHESSO G LEVADA S PIEROBON R	2003	IEICE Trans Electron2003，86，：	1
6	Sur- face-related drain current dispersion effects in AIGaN- GaN HEMTs显示文摘	Meneghesso G Verzellesi G Pierobon R	2004	IEEE Electron Devices2004，51，10：	1
7	Cur- rent collapse and high-electric-field reliability of unpas- sivated GaN/A1GaN/GaN HEMTs显示文摘	Meneghesso G Rampazzo F Kord6s P	2006	IEEE Electron Devices2006，53，12：	1
8	Surface-related drain current dispersion effects in AlGaN- GaN HEMTs 显示文摘	Meneghesso G Verzellesi G Pierobon R	2004	IEEE Trans Electron Devices2004，51，10：	1
9	Systematic characterization of C12 reactive ionetching for im- proved ohmics in AIGaN/GaN HEMTs 显示文摘	Buttari D Chini A Meneghesso G	2002	IEEE Electron Device Lett2002，23，2：	1
10	Sur- face-related drain current dispersion effects in AIGaN-GaN HEMTs显示文摘	Meneghesso G Verzellesi G Pierobon R	2004	IEEE Electron Devices2004，51，10：	1
11	Failure mechanisms of AlGaAs/InGaAs pseudomorphic HEMT′s:effects due to hot electrons and modulation of trapped charge显示文摘	Meneghesso G Levada S Zanoni E	1997	Microelectronics Reliability1997，37，：	1
12	Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LED显示文摘	Meneghesso G Podda S Vanzi M	2001	Microelection Reliab2001，41，5：	1
13	Investigation on ESD-stressed GaN/lnGaN-on-sapphire blue LEDs 显示文摘	MENEGHESSO G PODDA S VANZI M	2001	Microelectronics Reliability2001，41，910：	1
14	Recent results on the degradation of white LEDs for lighting 显示文摘	Meneghesso G Meneghini M Zanoni E	2010	Journal of Physics D: Applied Physics2010，43，35：	1
15	Reliability of visible GaN LEDs in plastic package 显示文摘	MENEGHESSO G LEVADA S ZANONI E	2003	Micmelectmnics Reliability2003，43，9：	1
16	Acombined electro-optical method for the determination of the recombination parameters in In Ga N-based light-emitting diodes显示文摘	M Meneghini N Trivellin G Meneghesso	2009	Journal of Applied Physics2009，106，11：	1
17	Investigation of High-electric-field Degradation Effects in Al- GaN/GaN HEMTs显示文摘	FAGIR M VERZELLESI G MENEGHESSO G	2008	IEEE ED2008，55，7：	1
18	Surface-Related Drain Current Dispersion Effects in AlGaN-GaN HEMTs显示文摘	Meneghesso G Verzellesi G Pierobon R	2004	IEEE Transactions on Electron Devices2004，51，10：	1
19	A review on the reliability of GaN-based LEDs显示文摘	Meneghini M Trevisanello L R Meneghesso G	2008	IEEE Transactions on Devices and Materials Reliability2008，8，2：	1
20	Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs显示文摘	BUTTARI D CHINI A MENEGHESSO G	2002	IEEE Electron Device Lett2002，23，2：	1

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