维普期刊资源整合服务平台（V6.5）

22篇 您的检索式：作者名="Mantooth"

选中清除导出查看参考文献查看引证文献引用追踪共2页首页上一页第1页下一页末页 /2 跳转

	题名	作者	年代	出处	被引量
1	Evaluation of 1.2 kV SiC MOSFETs in Multilevel Cascaded H-bridge Three-phase Inverter for Medium-voltage Grid Applications显示文摘A study is conducted to evaluate 1.2 kV silicon-carbide(SiC)MOSFETs in a cascaded H-bridge(CHB)three-phase inverter for medium-voltage applications.The main purpose of this topology is to remove the need for a bulky 60 Hz transformer normally used to step up the output signal of a voltage source inverter to a medium-voltage level.Using SiC devices(1.2-6.5 kV SiC MOSFETs)which have a high breakdown voltage,enables the system to meet and withstand the medium-voltage stress using only a minimal number of cascaded modules.The SiC-based power electronics when used in the presented topology considerably reduce the complexity usually encountered when Si devices are used to meet the medium-voltage level and power scalability.Simulation and preliminary experimental results on a low-voltage prototype verifies the nine-level CHB topology presented in this study.	Haider Mhiesan Janviere Umuhoza Kenneth Mordi Chris Farnell H.Alan Mantooth	2019	Chinese Journal of Electrical Engineering2019，5，2：	5
2	Algorithms for automatic model topoiogy formulation显示文摘	Y Feng H A Mantooth	2009	IEEE Trans on Computer-Aided Design2009，28，4：	1
3	Performance requirements for power MOSFET models显示文摘	Budihardjo I Lauritzen P O Mantooth H A		0，，01：	1
4	Electro-thermal simulation of an IGBT PWM inverters显示文摘	MANTOOTH H A HEFNER A R J		0，，03：	1
5	显示文摘	McNutt T Hefner A Mantooth A	2004	Solid State Electron2004，48，：	1
6	Electro thermal simulation of an IGBT PWM inverter显示文摘	Mantooth H A Hefner A R	1997	IEEE Transaction on Power Electronics1997，12，3：	1
7	Algorithms for automat ic model topology formulation显示文摘	Feng Y F Mantooth H A	2009	IEEE Trans on Computer-Aided Design2009，28，4：	1
8	Electro thermal simulation of an IGBT PWM inverter显示文摘	Mantooth H A Hefner A R	1997	IEEE Transactions on Power Electronics1997，12，3：	1
9	Conductance switching in single molecules through conformational changes 显示文摘	Donhauser Z J Mantooth B A Kelly K F	2001	Science2001，292，：	1
10	Conductance switching in single molecules through conformational changes 显示文摘	Donhauser Z J Mantooth B A Kelly K F	2001	Science2001，292，：	1
11	Silicon carbide power MOSFET model and parameter extraction sequence显示文摘	McNutt T Hefner A Mantooth H	2007	IEEE Transactions on Power Electronics2007，22，2：	1
12	Electrothermal simulation of an IGBT PWM inverter 显示文摘	Mantooth H A Hefner A R	1997	IEEE Transactions on Power Electronics1997，12，3：	1
13	Silicon carbide power MOSFET model and parameter ex- traction sequence显示文摘	McNutt T Hefner A Mantooth A	2007	IEEE Transactions on Power Electronics2007，22，2：	1
14	Electrothermal Simula-tion of an IGBT PWM Inverter显示文摘	Mantooth H A Hefner A R	1997	IEEE Transac-tions on Power Electronics1997，12，3：	1
15	Electro thermal simulation of an IGBT PWM inverter 显示文摘	MANTOOTH H A HEFNER A R	1997	IEEE Transaction on Power Electronics1997，12，3：	1
16	Reliable and repeatable bonding technology for high temperature automotive power modules for electrified vehicles显示文摘	YOON S GLOVER M MANTOOTH H	2013	J Micromech Microeng2013，23，01：	1
17	Crosscorrelation image tracking for drift correction and adsorbate analysis显示文摘	Mantooth B A Donhauser Z J Kelly K F Weiss P S	2002	Rev Sci Instrum2002，73，：	1
18	Conductance switching in single molecules through conformational changes 显示文摘	DONHAUSER I J MANTOOTH B A KELLY K F	2001	Science2001，292，：	1
19	Silicon carbide power MOSFET model and parameter extraction sequence显示文摘	McNutt T R Hefner A R Mantooth H R Jr	2007	IEEE Transactions on Power Electronics2007，22，2：	1
20	Precise Electro-thermal Power Loss Model of a Three-level ANPC Inverter with Hybrid Si/SiC Switches显示文摘Hybrid Si/SiC switches constituting a parallel connection of a lower current rated SiC MOSFET and a higher current rated Si IGBT are becoming very attractive solution for designing high frequency and high-power density power electronic converters.Due to the complementary nature of Si IGBT devices(smaller inverter cost and smaller conduction loss)and SiC devices(smaller switching loss and higher junction temperature capability),these novel switch device configurations enable a good tradeoff between cost and efficiency for high power converter applications.One such recent application of hybrid Si/SiC switches for efficiency-cost optimization is an Si/SiC hybrid switch based ANPC inverter proposed in Ref.[30].In Ref.[30]the topology structure,modulation strategy and the efficiency-cost benefits of the proposed ANPC inverter is presented.In this paper a precise electro-thermal power loss model for this ANPC inverter topology will be presented based on the modulation strategy of the inverter and the operating characteristics of the Si/SiC hybrid switches.The power loss model development takes into account how the current sharing between the two internal devices of the Si/SiC hybrid switches and their corresponding gate control method affects their power loss.A brief introduction to the topology structure and operation principle of the Si/SiC based ANPC inverter is first highlighted to provide context for readers and then a detailed description of the proposed electro-thermal power loss model is presented.The precision of the electro-thermal power loss model introduced in this paper is then validated using experimentally measured energy loss,device temperature and inverter efficiency data.	Dereje Woldegiorgis H.Alan Mantooth	2022	Chinese Journal of Electrical Engineering2022，8，3：	0

返回顶部每页显示：

共2页首页上一页第1页下一页末页 /2 跳转

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

用户提示