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3篇 您的检索式:作者名="Matthew B.Johnson"
    题名 作者 年代 出处 被引量
1Shape Control of Doped Semiconductor Nanocrystals (d-Dots)显示文摘Formation of Mn2+-doped ZnSe quantum dots(Mn:ZnSe d-dots)with both branched and nearly spherical shapes has been studied.Structure analysis indicates that the Mn2+dopants were localized in the core of a branched nanocrystal.The growth of branched d-dots,rather than spherical ones,was achieved by simply varying the concentration of two organic additives,fatty acids,and fatty amines.The photoluminescence properties of the branched nanocrystals were explored and compared with those of the nearly spherical particles.Ranjani Viswanatha David M.Battaglia Mark E.Curtis Tetsuya D.Mishima Matthew B.Johnson Xiaogang Peng 2008Nano Research2008,1,2:7
2Exploring DFT+U parameter space with a Bayesian calibration assisted by Markov chain Monte Carlo sampling显示文摘The density-functional theory is widely used to predict the physical properties of materials.However,it usually fails for strongly correlated materials.A popular solution is to use the Hubbard correction to treat strongly correlated electronic states.Unfortunately,the values of the Hubbard U and J parameters are initially unknown,and they can vary from one material to another.In this semi-empirical study,we explore the U and J parameter space of a group of iron-based compounds to simultaneously improve the prediction of physical properties(volume,magnetic moment,and bandgap).We used a Bayesian calibration assisted by Markov chain Monte Carlo sampling for three different exchange-correlation functionals(LDA,PBE,and PBEsol).We found that LDA requires the largest U correction.PBE has the smallest standard deviation and its U and J parameters are the most transferable to other iron-based compounds.Lastly,PBE predicts lattice parameters reasonably well without the Hubbard correction.Pedram Tavadze Reese Boucher Guillermo Avendaño-Franco Keenan X.Kocan Sobhit Singh Viviana Dovale-Farelo Wilfredo Ibarra-Hernández Matthew B.Johnson David S.Mebane Aldo H.Romero 2021npj Computational Materials2021,,1:0
3Multistage interband cascade photovoltaic devices with a bandgap of 0.23 eV operating above room temperature显示文摘Interband cascade(IC)photovoltaic(PV)device structures,consisting of multiple discrete InAs/GaSb superlattice absorbers sandwiched between electron and hole barriers,were grown by molecular beam epitaxy.Details of the molecular beam epitaxy growth and material characterization of the structures are presented.The discrete absorber architecture enables certain advantages,such as high open-circuit voltage,high collection efficiency,high operating temperature,and smooth integration of cascade stages with different bandgaps.The two-and three-stage ICPV devices presented in this article operate at room temperature with substantial open-circuit voltages at a cutoff wavelength of 5.3 lm(corresponding to a bandgap of 0.23 eV),the longest ever reported for room temperature PV devices.The device characteristics indicate a high level of current matching and demonstrate the advantages of the interband cascade approach in thermophotovoltaic cell design.Hao Ye Hossein Lotfi Lu Li Robert T.Hinkey Rui Q.Yang Lin Lei Joel C.Keay Matthew B.Johnson Tetsuya D.Mishima Michael B.Santos 2014Chinese Science Bulletin2014,59,10:0
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