|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Influence of social capital on community pre- paredness for wildfires 显示文摘 | Menka Bihari Robert Ryan | 2012 | Landscape and Urban Planning2012，106，3： | 1 |
| 2 | Analytic Chimica Acta显示文摘 | Radak Bojan B Petkovska Menka T Trtica Milan S | 2004 | 505:67-712004，505，： | 1 |
| 3 | Bioaccessibility, release kinetics, and molecular speciation of arsenic and lead in geo-dusts from the Iron King Mine Federal Superfund site in Humboldt, Arizona显示文摘 | Nazune Menka Rob Root Jon Chorover | 2014 | Reviews on Environmental Health . 2014 (1-2)2014，，1： | 1 |
| 4 | Naphthalene and phenanthrene sorption to very low organic content diatomaceous earth:Modeling impli cations for microbial bioavailability 显示文摘 | Menka M Rockne K J | 2009 | Chemosphere2009，74，8： | 1 |
| 5 | Effect of aeration and mixed culture of Eichhornia crassipes and Salvinia natans on removal of wastewater pollutants显示文摘 | Menka Kumari Tripathi B D | 2014 | Ecological Engineering2014，62，： | 1 |
| 6 | Performance optimization of tri-gate junctionless FinFET using channel stack engineering for digital and analog/RF design显示文摘This manuscript explores the behavior of a junctionless tri-gate FinFET at the nano-scale region using SiGe material for the channel.For the analysis,three different channel structures are used:(a)tri-layer stack channel(TLSC)(Si-SiGe-Si),(b)double layer stack channel(DLSC)(SiGe-Si),(c)single layer channel(SLC)(S_(i)).The I−V characteristics,subthreshold swing(SS),drain-induced barrier lowering(DIBL),threshold voltage(V_(t)),drain current(ION),OFF current(IOFF),and ON-OFF current ratio(ION/IOFF)are observed for the structures at a 20 nm gate length.It is seen that TLSC provides 21.3%and 14.3%more ON current than DLSC and SLC,respectively.The paper also explores the analog and RF factors such as input transconductance(g_(m)),output transconductance(gds),gain(gm/gds),transconductance generation factor(TGF),cut-off frequency(f_(T)),maximum oscillation frequency(f_(max)),gain frequency product(GFP)and linearity performance parameters such as second and third-order harmonics(g_(m2),g_(m3)),voltage intercept points(VIP_(2),VIP_(3))and 1-dB compression points for the three structures.The results show that the TLSC has a high analog performance due to more gm and provides 16.3%,48.4%more gain than SLC and DLSC,respectively and it also provides better linearity.All the results are obtained using the VisualTCAD tool. | Devenderpal Singh Shalini Chaudhary Basudha Dewan Menka Yadav | 2023 | Journal of Semiconductors2023，44，11： | 0 |
| 7 | Insights into channel potentials and electron quasi-Fermi potentials for DG tunnel FETs显示文摘A detailed investigation carried out, with the help of extensive simulations using the TCAD device simulator Sentaurus, with the aim of achieving an understanding of the effects of variations in gate and drain potentials on the device characteristics of a silicon double-gate tunnel field effect transistor(Si-DG TFET) is reported in this paper. The investigation is mainly aimed at studying electrical properties such as the electric potential, the electron density, and the electron quasi-Fermi potential in a channel. From the simulation results, it is found that the electrical properties in the channel region of the DG TFET are different from those for a DG MOSFET. It is observed that the central channel potential of the DG TFET is not pinned to a fixed potential even after the threshold is passed(as in the case of the DG MOSFET); instead, it initially increases and later on decreases with increasing gate voltage, and this is also the behavior exhibited by the surface potential of the device. However, the drain current always increases with the applied gate voltage. It is also observed that the electron quasi-Fermi potential(e QFP)decreases as the channel potential starts to decrease, and there are hiphops in the channel e QFP for higher applied drain voltages. The channel regime resistance is also observed for higher gate length, which has a great effect on the I–V characteristics of the DG TFET device. These channel regime electrical properties will be very useful for determining the tunneling current; thus these results may have further uses in developing analytical current models. | Menka Anand Bulusu S.Dasgupta | 2015 | Journal of Semiconductors2015，36，1： | 0 |
您所在的机构暂未开通此部分的功能，请联系管理员