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您的检索式：作者名="Mingzeng Peng"
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| 1 | Boron-rich layer removal and surface passivation of boron-doped p–n silicon solar cells显示文摘In boron-doped p+-n crystalline silicon(Si) solar cells, p-type boron doping control and surface passivation play a vital role in the realization of high-efficiency and low cost pursuit. In this study, boron-doped p+-emitters are formed by boron diffusion in an open-tube furnace using borontribromide(BBr3) as precursor. The formed emitters are characterized in detail in terms of shape of the doping profile, surface doping concentration, junction depth, sheet resistance and removal of the boron-rich layer(BRL). In the aspect of BRL removal, three different methods were adopted to investigate their influence on device performance. The results demonstrate that our proposed chemical etch treatment(CET) with the proper etching time could be an effective way to remove the BRL.After removal of the BRL, Al_2 O_3/SiN_x stacks are deposited by atomic layer deposition(ALD) and plasma-enhanced chemical vapor deposition(PECVD) to passivate the cell surface. It was found that a reasonably-high implied Voc of 680 mV has been achieved for the fabricated n-type Si solar cells. | Caixia Hou Rui Jia Ke Tao Shuai Jiang Pengfei Zhang Hengchao Sun Sanjie Liu Mingzeng Peng Xinhe Zheng | 2018 | Journal of Semiconductors2018，39，12： | 0 |
| 2 | X-band AlGaN/GaN HEMTs with high microwave power performance显示文摘An X-band AlGaN/GaN high-electron-mobility transistor (HEMT) on SiC substrate with high microwave power performances has been achieved. Its small-signal characteristics with a gate-length of 0.4 μm showed a unity current gain cut-off frequency (fT) of 22 GHz and a maximum oscillation frequency (fmax) of 65 GHz. The GaN HEMT device with a gate width of 1 mm exhibited a continuous-wave saturated output power of 10.2 W and a linear gain of 14.8 dB at 8 GHz, and successfully achieved the power-added efficiency (PAE) as high as 69.2%, which is very suitable for X-band power applications. | PENG MingZeng ZHENG YingKui WEI Ke CHEN XiaoJuan LIU XinYu | 2011 | Science China(Physics,Mechanics & Astronomy)2011，54，3： | 0 |
| 3 | Piezoelectric and deformation potential effects of straindependent luminescence in semiconductor quantum well structures显示文摘紧张依赖者光的机制为察觉到压力的设备的合理设计是重要的。interband 动量矩阵元素是为理解光现象的关键数量。我们经分解解决了无限的量很好( IQW )与种类当模特儿,在为 Fe 2 O 3-SnO2/graphene 混血儿,在哪个零维( 0D )有 8 nm 的一条平均直径的 SnO 2 nanoparticles 并且一个维( 1D ) Fe 2有一段~的 O 3 nanorods 150 nm 同类地被依附到上二维( 2D )减少了 graphene 氧化物 nanosheets ,产生唯一的夏威夷人用芋头做成的食品完成的 Fe 2 O 3-SnO2/graphene 展出明确的形态学, u?? | Aihua Zhang Mingzeng Peng Morten Willatzen Junyi Zhai Zhong Lin Wang | 2017 | Nano Research2017，10，1： | 0 |
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