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您的检索式：作者名="Mohammad Azim Karami"
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| 1 | Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces显示文摘By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact(IBC) silicon solar cell, a new passivation layer is investigated. The passivation layer performance is characterized by numerical simulations. Moreover, the dependence of the output parameters of the solar cell on the additional layer parameters(doping concentration and thickness) is studied. By optimizing the additional passivation layer in terms of doping concentration and thickness, the power conversion efficiency could be improved by a factor of2.5%, open circuit voltage is increased by 30 mV and the fill factor of the solar cell by 7.4%. The performance enhancement is achieved due to the decrease of recombination rate, a decrease in solar cell resistivity and improvement of field effect passivation at heterojunction interface. The above-mentioned results are compared with reported results of the same conventional interdigitated back-contact silicon solar cell structure. Furthermore, the effect of a-Si:H/c-Si interface defect density on IBC silicon solar cell parameters with a new passivation layer is studied. The additional passivation layer also reduces the sensitivity of output parameter of solar cell to interface defect density. | Hadi Bashiri Mohammad Azim Karami Shahramm Mohammadnejad | 2017 | Chinese Physics B2017，26，10： | 3 |
| 2 | Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies显示文摘This paper proposes two optimal designs of single photon avalanche diodes(SPADs) minimizing dark count rate(DCR). The first structure is introduced as p^+/pwell/nwell, in which a specific shallow pwell layer is added between p^+and nwell layers to decrease the electric field below a certain threshold. The simulation results show on average 19.7%and 8.5% reduction of p^+/nwell structure’s DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. Moreover, a new structure is introduced as n+/nwell/pwell, in which a specific shallow nwell layer is added between n+and pwell layers to lower the electric field below a certain threshold. The simulation results show on average 29.2% and 5.5% decrement of p^+/nwell structure’s DCR comparing with similar previous structures in different operational excess bias and temperatures respectively. It is shown that in higher excess biases(about 6 volts), the n+/nwell/pwell structure is proper to be integrated as digital silicon photomultiplier(dSiPM) due to low DCR. On the other hand, the p^+/pwell/nwell structure is appropriate to be utilized in dSiPM in high temperatures(above 50?C) due to lower DCR value. | Taha Haddadifam Mohammad Azim Karami | 2019 | Chinese Physics B2019，28，6： | 2 |
| 3 | Tunneling in submicron CMOS single-photon avalanche diodes显示文摘Tunneling is studied in two main single-photon avalanche diode(SPAD) topologies,which are n-tub guard ring(NTGR) and p-tub guard ring(PTGR).Device simulation,I-V measurements,and dark count calculations and measurements demonstrate that tunneling is the main source of noise in NTGR,but it is less dominant in PTGR SPADs.All structures are characterized with respect to dark noise,photon detection probability,timing jitter,afterpulsing probability,and breakdown voltage.Noise performance is disturbed because of tunneling,whereas jitter performance is disturbed because of the short diffusion time of photo-generated minority carriers in NTGR SPADs.The maximum photon detection probability is enhanced because of an improvement in absorption thickness. | Mohammad Azim Karami Armin Amiri-Sani Mohammad Hamzeh Ghormishi | 2014 | Chinese Optics Letters2014，12，1： | 2 |
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