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16篇 您的检索式:作者名="Parikh C D"
    题名 作者 年代 出处 被引量
1Device scaling effects on hot-carrier induced interfaceand oxide-trapped charge distributions in MOSFET' s 显示文摘MAHAPATRA S PARIKH C D RAO V R 2000IEEE Trans Elee Dev2000,47,1:1
2Evidence-based protocols for the management of well-differentiated carcinomas of the thyroid显示文摘Rao R S Parikh D M Distry R C 2002Asian J Surg2002,25,4:1
3A compact model for the N-well resistor 显示文摘Parikh C D Patrikar R M 1999Solid-State Electron1999,43,3:1
4Circulating angiopoietin-2 correlates with mortality in a surgical population with acute lung injury/adult respiratory distress syndrome显示文摘Gallagher D C Parikh S M Balonov K 2008Shock2008,29,6:1
5Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFET' s 显示文摘MAHAPATRA S PARIKH C D RAO V R 2000IEEE Transactions on Electron Devices2000,47,1:1
6HIV-infected individuals with co-occurring bipolar disorder evidence poor antiretroviral and psyehiatrie medication adherence显示文摘Moore D J Posada C Parikh M 2012AIDS Behav2012,16,8:1
7Congenitalre nalagenesis: case-control analysis of birth characteristics显示文摘Parikh C R McCall D Engelman C 2002Am J Kidney Dis2002,39,4:1
8A new muttifrequency charge pumping technique to profile hot-carrier-induced interface-state density in nMOSFET显示文摘Mahapatra C Parikh C D Vasi J 1999IEEE Transactions on Electron Devices1999,46,5:1
9Stress - induced analgesia and endogenous opioid peptides : the importance of stress duration显示文摘PARIKH D HAMID A FRIEDMAN T C 2011Eur J Pharmacol2011,650,23:1
10Modeling of a Depletion-Mode MOSFET显示文摘Parikh C D Vasi J 1987Solid-State Electronics1987,30,7:1
11Venous thromboembolism prophylaxis in medical ICU patients in Asia(VOICE A):A muhieenter, observational, cross-sectional study显示文摘Parikh KC Oh D Sittipunt C 2012Thrombosis Research2012,129,4:1
12Stress-induced analgesia and endogenous opioid peptides:the importance of stress duration显示文摘Parikh D Hamid A Friedman T C 2011Eur J Pharmacol2011,650,23:1
13Regulation of photoperiodic flowering by Arabidopsis photoreeeptors显示文摘MOCKLER T YANG H YU X H PARIKH D CHENG Y C DOLAN S LIN C T 2003PNAS2003,100,4:1
14Modeling of the CoolMOSTM transistor -Part I:device physics显示文摘DANIEL B J PARIKH C D PATIL M B 2002IEEE Trans Elec Dev2002,49,5:1
15Modeling of a depletion-mode MOSFET 显示文摘PARIKH C D VASI J 1987Sol Sta Elec1987,30,7:1
16A comprehensive study of hot-carrier induced interface and oxide trap distri- bution in MOSFET's using a novel charge pumping tech- nique显示文摘Mahapatra S Parikh C D Rao V R 2000IEEE Transactions on Electron Devices2000,47,1:1
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