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| 1 | Uniform Non-Bernoulli Sequences Oriented Locating Method for Reliability-Critical Gates显示文摘Hardening reliability-critical gates in a circuit is an important step to improve the circuit reliability at a low cost.However,accurately locating the reliability-critical gates is a key prerequisite for the efficient implementation of the hardening operation.In this paper,a probabilistic-based calculation method developed for locating the reliabilitycritical gates in a circuit is described.The proposed method is based on the generation of input vectors and the sampling of reliability-critical gates using uniform non-Bernoulli sequences,and the criticality of the gate reliability is measured by combining the structure information of the circuit itself.Both the accuracy and the efficiency of the proposed method have been illustrated by various simulations on benchmark circuits.The results show that the proposed method has an efficient performance in locating accuracy and algorithm runtime. | Jie Xiao Zhanhui Shi Weidong Zhu Jianhui Jiang Qianwei Zhou Jungang Lou Yujiao Huang Qiou Ji Ziwen Sun | 2021 | Tsinghua Science and Technology2021，26，1： | 1 |
| 2 | Defect detection of IC wafer based on spectral subtraction显示文摘 | Liu Hongxia Zhou Wen Kuang Qianwei | 2010 | IEEE Transactions on Semiconductor Manufacturing2010，23，1： | 1 |
| 3 | Response characteristics of plunge pool slabs of Xiaxiluodu Hydropower deformation conditions显示文摘The key problem of the energy dissipation scheme of the arch dam body flood discharge and plunge pool below the dam is the stability problem of the plunge pool slab.As the protection structure of the underwater bed,the plunge pool slab bears the continuous impact of high-speed water flow.The hourly average dynamic water pressure on the slab is one of the main loads directly affecting the stability of the slab and is the main factor causing its erosion destruction.After the impoundment of the Xiluodu Hydropower Station,the measuring line of valley width in the plunge pool area has been continuously shrinking.By 2020,the cumulative shrinking value is about 80 mm.In light of the general background condition of valley shrinkage,daily inspection,annual detailed inspection,underwater inspection and drainage inspection of the plunge pool found that the plunge pool has experienced different degrees of damage,which greatly influences the long-term safety stability of the plunge pool.In this paper,the prototype observation data of flood discharge is used as the input load of pulsatingpressure,and the stress and displacement distribution of the plunge pool structure under the vibration load of flood discharge is analyzed under the condition that the stress and strain state of the plunge pool is changed under the influence of valley displacement.The results show that the stress,strain,and displacement distribution of the plunge pool are mainly caused by valley deformation,the vibration caused by flood discharge is little in influence,and the impact effect of deep hole flood discharge tongue on the plunge pool slab is weak. | Jie Yuan Qianwei Xi Xin Jia Yang Zhou Yu Hu | 2022 | Earthquake Research Advances2022，2，4： | 0 |
| 4 | A novel model of photo-carrier screening effect on the GaN-based p-i-n ultraviolet detector显示文摘The photo-carrier density in the depletion region of the GaN-based p-i-n ultraviolet(UV) detector is calculated by solving the photo-carrier continuity equation,and the photo-carrier screening electric field is calculated according to Poisson's equation.Using the numerical calculation method,a novel model of photo-carrier screening effect is presented.Then the influence of photo-carrier screening effect on the distribution of photo-carrier density in the depletion region of p-i-n detector is discussed.The influence of incident power,bias voltage and carrier life time on the photo-carrier screening effect is also analyzed.It is concluded that the influence of photo-carrier screening effect on the performance of GaN-based p-i-n UV detector is non-monotone,the maximum of carrier drift velocity and the minimum of response time can be realized by adjusting the applied voltage.Besides,the incident light duration has strong impact on the photo-carrier screening effect. | GAO Bo,LIU HongXia,KUANG QianWei,ZHOU Wen & CAO Lei School of Microelectronics,Xidian University,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xi’an 710071,China | 2010 | Science China(Physics,Mechanics & Astronomy)2010，53，5： | 0 |
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