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1篇 您的检索式：作者名="Ralph Rothemund"

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		题名	作者	年代	出处	被引量
	1	Direct Comparison of Catalyst-Free and Catalyst-Induced GaN Nanowires显示文摘GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds.Under identical growth conditions of temperature andⅤ/Ⅲratio,both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets.However,the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker.These differences can be explained as effects of the catalyst Ni seeds.	Caroline Chèze Lutz Geelhaar Oliver Brandt Walter M.Weber Henning Riechert Steffen Münch Ralph Rothemund Stephan Reitzenstein Alfred Forchel Thomas Kehagias Philomela Komninou George P.Dimitrakopulos Theodoros Karakostas	2010	Nano Research2010，3，7：	0

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