维普期刊资源整合服务平台（V6.5）

维普中文期刊产品整合服务

1篇 您的检索式：作者名="Robert ESimpson"

选中清除导出查看参考文献查看引证文献引用追踪共1页首页上一页第1页下一页末页 /1 跳转

		题名	作者	年代	出处	被引量
	1	Resistance modulation in Ge2Sb2Te5显示文摘Chalcogenide based phase change random access memory(PCRAM) holds great promise for high speed and large data storage applications.This memory is scalable,requires a low switching energy,has a high endurance,has fast switching speed,and is nonvolatile.However,decreasing the switching time whilst increasing the cycle endurance is a key challenge for this technology to replace dynamic random access memory.Here we demonstrate high speed and high endurance ultrafast transient switching in the SET state of a prototypical phase change memory cell.Volatile switching is modeled by electron-phonon and lattice scattering on short timescales and charge carrier excitation on long timescales.This volatile switching in phase change materials enables the design of hybrid memory modulators and ultrafast logic circuits.	Jitendra K.Behera Wei Jie Wang Xilin Zhou Shan Guan Wu Weikang Yang AShengyuan Robert ESimpson	2020	Journal of Materials Science & Technology2020，47，15：	0

返回顶部每页显示：

共1页首页上一页第1页下一页末页 /1 跳转

goolge学术搜索-维普

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1　渝公网安备 50019002500403号　违法和不良信息举报中心

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费