5篇
您的检索式：作者名="Ruijiang Hong"
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| 1 | Effects of high temperature annealing on the dislocation density and electrical properties of upgraded metallurgical grade multicrystalline silicon显示文摘High temperature annealing was performed on upgraded metallurgical grade multicrystalline silicon (UMG multi-Si) wafers with a purity of 99.999%. The samples were mechanically polished and chemically etched, and then the microstructures were observed by a scanning electron microscope (SEM). The minority carrier lifetime and resistivity of the samples were measured using microwave photoconductance decay and four-point probe techniques, respectively. The results show that the electrical properties of the samples decrease rather than increase as the annealing temperature increases, while the number of dislocations in bulk Si reduced or even disappeared after annealing for 6 hours at 1100–1400°C. It is considered that the structural microdefects induced by the high concentration of metal impurities (including interstitial or substitutional impurities and nanoscale precipitates) determine the minority carrier recombination activity and thus the electrical properties of UMG multi-Si wafers rather than dislocations in bulk Si. | HuaBi Xu RuiJiang Hong Hui Shen | 2011 | Chinese Science Bulletin2011，56，7： | 2 |
| 2 | Research on the 3PL Supplier Selection Based on Set-Val- ued Satisfaction显示文摘 | Fachao Li Ling Li Chenxia Jin Ruijiang Wang Hong Wang | 2012 | Computers and Operations Research2012，39，8： | 1 |
| 3 | Generation Mechanism of Inhomogeneous Minority Carrier Lifetime Distribution in High Quality mc-Si Wafers and the Impacts on Electrical Performance of Wafers and Solar Cells显示文摘To find out the causation of inhomogeneous minority carrier lifetime distribution in high quality multicrystalline silicon(mc-Si) wafers, impurities and lattice defects were systematically studied by means of Fourier transform infrared(FTIR) spectroscopy and metallography. Inhomogeneously distributed oxygen impurity and dislocations were demonstrated to be key leading factors, and the restriction mechanism was discussed. Scattering process caused by ionized impurities and dislocations decreased carrier mobility, while carrier concentration was not significantly affected. Measurements showed that resistivity was higher and more dispersive in low lifetime area. Solar cells were fabricated with these wafers. Cells' efficiency of inhomogeneous ones exhibited averagely 0.27% lower than the regular ones in absolute terms.Recombination centers and leakage loss induced by dislocations and impurities led to the reduction in shunt resistors and open-circuit voltage, and then affected the performance of cells. | Xianxin Liu Genghua Yan Ruijiang Hong | 2015 | Journal of Materials Science & Technology2015，31，11： | 1 |
| 4 | ZnO:Al Films Prepared by Reactive Mid-frequency Magnetron Sputtering with Rotating Cathode显示文摘Al-doped zinc oxide (ZnO:Al,AZO) films were deposited on glass substrates using a reactive mid-frequency (MF) magnetron sputtering process with rotating cathodes.The influence of deposition parameters on structural,electrical and optical properties of AZO films is investigated.It is observed that the rotating magnetron targets exhibited a sputtered metallic surface over a wider range,and there is no re-deposition zone between the racetracks.The films deposited at static deposition mode demonstrate more homogenous in thickness and resistivity across the target surface compared with conventional rectangular targets.The films deposited under the proper conditions show a regular cone-shaped grain surface and densely packed columnar structure.The minimum resistivity of 3.16×10-4 ·cm was obtained for the film prepared at substrate temperature of 150 C,gas pressure of 640 MPa and oxygen partial pressure of 34 MPa. | Ruijiang Hong Shuhua Xu | 2010 | Journal of Materials Science & Technology2010，26，10： | 1 |
| 5 | Application of phosphorus diffusion gettering process metallurgical grade Si wafers and solar cells on upgraded显示文摘 | Xu Huabi Hong Ruijiang Ai Bing | 2010 | AppliedEnergy2010，87，11： | 1 |
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