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| 1 | Lithium-ionrechargeable battery with petroleum coke anode and polyaniline cathode显示文摘 | Weihua Qiu Ruqi Zhou Leiling Yang Qngguo Liu | 1996 | Solid State Ionics1996，8688，： | 1 |
| 2 | Magnetostriction of RFe_(11)Ti and RFe_(10)Cr_(2)显示文摘The magnetostriction of polycrystal RFe_(11)Ti(R=Nd,Sm,Gd,Tb,Dy,Ho,Er and Y)and RFe_(10)Cr_(2)(R=Tb and Dy)compounds with ThMn_(12)-typestructure have been investigated at 77K and room temperature in magnetic fields up to 20kOe.The values of magnetastriction λ_(t)=λ_(||)-λ_(⊥)in H=20kOe at 300K are 180×10^(-6) for TbFe_(11)Ti and 106×10^(-6)for Tb_(10)Cr_(2).The magnetostrictions for compounds with R=Nd,Sm,Dy,Ho and Er are very small.The signs ofλt for all these compounds are in agreement with that predicted by the singleion crystal field theory.All studied samples show a volume magnetostriction feature.Their forced magnetostrictionsΔω/ΔH have a value which is close to that of YFe_(11)Ti,27×10^(-10)/Oe.It reveals that the Fe sublattice is responsible for the volumc magnetostriction. | LI Jingyuan LI Qing'an YANG Fuming LI Ruqi FAN Xiaoli ZMAO Xuegen JIA Kechang | 1993 | Chinese Physics Letters1993，10，3： | 0 |
| 3 | Homojunction structure amorphous oxide thin film transistors with ultra-high mobility显示文摘Amorphous oxide semiconductors(AOS)have unique advantages in transparent and flexible thin film transistors(TFTs)applications,compared to low-temperature polycrystalline-Si(LTPS).However,intrinsic AOS TFTs are difficult to obtain field-effect mobility(μFE)higher than LTPS(100 cm^(2)/(V·s)).Here,we design ZnAlSnO(ZATO)homojunction structure TFTs to obtainμFE=113.8 cm^(2)/(V·s).The device demonstrates optimized comprehensive electrical properties with an off-current of about1.5×10^(-11)A,a threshold voltage of–1.71 V,and a subthreshold swing of 0.372 V/dec.There are two kinds of gradient coupled in the homojunction active layer,which are micro-crystallization and carrier suppressor concentration gradient distribution so that the device can reduce off-current and shift the threshold voltage positively while maintaining high field-effect mobility.Our research in the homojunction active layer points to a promising direction for obtaining excellent-performance AOS TFTs. | Rongkai Lu Siqin Li Jianguo Lu Bojing Lu Ruqi Yang Yangdan Lu Wenyi Shao Yi Zhao Liping Zhu Fei Zhuge Zhizhen Ye | 2023 | Journal of Semiconductors2023，44，5： | 0 |
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