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| 1 | 1-MeV electron irradiation effects on InGaAsP/InGaAs double-junction solar cell and its component subcells显示文摘Solar cells(SCs)are used as the primary source of power in satellites and other space missions,and operate in a harsh radiation environment in orbit.The demand for power has been increasing in various space tasks.Space applications require high radiation hardness and power-to-mass ratio for SCs.In the past decade,high efficiency(30%at AM0,1 sun),lattice-matched,Ga In P/Ga | Xiaofan ZHAO Maliya HEINI Momin SAILAI Abuduwayiti AIERKEN Qi GUO Yudong LI Shulong LU Pan DAI Yuanyuan WU Ming TAN | 2017 | Science China(Information Sciences)2017，60，12： | 2 |
| 2 | Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors显示文摘Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace.The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy(MBE) has been investigated by photoluminescence(PL) measurements. The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission, which indicates that Zn was commendably diffused into InP layer as the acceptor. High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 °C for 10 min. Furthermore, more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process.Based on the above Zn-diffusion technique, a 50 μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of.5 V and a high breakdown voltage of larger than 41 V(I < 10 μA). In addition, a high responsivity of 0.81 A/W at 1.31 μm and 0.97 A/W at 1.55 μm was obtained in the developed PIN photodetector. | Guifeng Chen Mengxue Wang Wenxian Yang Ming Tan Yuanyuan Wu Pan Dai Yuyang Huang Shulong Lu | 2017 | Journal of Semiconductors2017，38，12： | 0 |
| 3 | Influence of temperature and reverse bias on photocurrent spectrum and supra-bandgap spectral response of monolithic GalnP/GaAs double-junction solar cell显示文摘 | Zhuo DENG Jiqiang NING Rongxin WANG Zhicheng SU Shijie XU Zheng XING Shulong LU Jianrong DONG Hui YANG | 2016 | Frontiers of Optoelectronics2016，9，2： | 0 |
| 4 | Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy显示文摘The InGaN films and GaN/InGaN/GaN tunnel junctions(TJs)were grown on GaN templates with plasma-assisted molecular beam epitaxy.As the In content increases,the quality of InGaN films grown on GaN templates decreases and the surface roughness of the samples increases.V-pits and trench defects were not found in the AFM images.p++-GaN/InGaN/n++-GaN TJs were investigated for various In content,InGaN thicknesses and doping concentration in the InGaN insert layer.The InGaN insert layer can promote good interband tunneling in GaN/InGaN/GaN TJ and significantly reduce operating voltage when doping is sufficiently high.The current density increases with increasing In content for the 3 nm InGaN insert layer,which is achieved by reducing the depletion zone width and the height of the potential barrier.At a forward current density of 500 A/cm^(2),the measured voltage was 4.31 V and the differential resistance was measured to be 3.75×10^(−3)Ω·cm^(2)for the device with a 3 nm p++-In_(0.35)Ga_(0.65)N insert layer.When the thickness of the In_(0.35)Ga_(0.65)N layer is closer to the“balanced”thickness,the TJ current density is higher.If the thickness is too high or too low,the width of the depletion zone will increase and the current density will decrease.The undoped InGaN layer has a better performance than n-type doping in the TJ.Polarization-engineered tunnel junctions can enhance the functionality and performance of electronic and optoelectronic devices. | Jun Fang Fan Zhang Wenxian Yang Aiqin Tian Jianping Liu Shulong Lu Hui Yang | 2024 | Journal of Semiconductors2024，45，1： | 0 |
| 5 | Realize ultralow-energy-consumption photo-synaptic device based on a single(Al,Ga)N nanowire for neuromorphic computing显示文摘The rapid development of artificial intelligence poses an urgent need for low-energy-consumption and small-sized artificial photonic synapses.Here,it is pretty novel to demonstrate a light-stimulated synaptic device based on a single(Al,Ga)N nanowire successfully.Thanks to the presence of vacancy defects in the single nanowire,the artificial synaptic device can simulate multiple functions of biological synapses under stimulation of both 310 and 365 nm light photons,including paired-pulse facilitation,spike timing dependent plasticity,and memory learning capabilities.The energy consumption of artificial synaptic device can be reduced as little as 5.58×10^(-13) J,which is close to that of the biological synapse in human brain.Furthermore,the synaptic device is demonstrated to have the high stability for both long-time stimulation and long-time storage.Based on the experimental conductance of long-term potentiation and long-term depression,the simulated three-layer neural network can achieve a high recognition rate of 92%after only 10 training epochs.With a brain-like behavior,the single-nanowire-based synaptic devices can promote the development of visual neuromorphic computing technology and artificial intelligence systems requiring ultralow energy consumption. | Xiushuo Gu Min Zhou Yukun Zhao Qianyi Zhang Jianya Zhang Yonglin Huang Shulong Lu | 2024 | Nano Research2024，17，3： | 0 |
| 6 | Light-stimulated low-power artificial synapse based on a single GaN nanowire for neuromorphic computing显示文摘The fast development of the brain-inspired neuromorphic computing system has ignited an urgent demand for artificial synapses with low power consumption. In this work, it is the first time a light-stimulated low-power synaptic device based on a single GaN nanowire has been demonstrated successfully. In such an artificial synaptic device, the incident light, the electrodes, and the light-generated carriers play the roles of action potential,presynaptic/postsynaptic membrane, and neurotransmitter in a biological synapse, respectively. Compared to those of other synaptic devices based on GaN materials, the energy consumption of the single-GaN-nanowire synaptic device can be reduced by more than 92%, reaching only 2.72 × 10^(-12)J. It is proposed that the oxygen element can contribute to the synaptic characteristics by taking the place of the nitrogen site. Moreover, it is found that the dynamic “learning-forgetting” performance of the artificial synapse can resemble the behavior of the human brain, where less time is required to relearn the missing information previously memorized and the memories can be strengthened after relearning. Based on the experimental conductance for long-term potentiation(LTP) and long-term depression(LTD), the simulated network can achieve a high recognition rate up to 90%after only three training epochs. Such few training times can reduce the energy consumption in the supervised learning processes substantially. Therefore, this work paves an effective way for developing single-nanowire-based synapses in the fields of artificial intelligence systems and neuromorphic computing technology requiring lowpower consumption. | MIN ZHOU YUKUN ZHAO XIUSHUO GU QIANYI ZHANG JIANYA ZHANG MIN JIANG SHULONG LU | 2023 | Photonics Research2023，11，10： | 0 |
| 7 | Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy显示文摘The atomic structure and surface chemistry of GaP/Si(100)heterostructure with different pre-layers grown by molecu-lar beam epitaxy are studied.It is found that GaP epilayer with Ga-riched pre-layers on Si(100)substrate has regular surface mor-phology and stoichiometric abrupt heterointerfaces from atomic force microscopes(AFMs)and spherical aberration-corrected transmission electron microscopes(ACTEMs).The interfacial dynamics of GaP/Si(100)heterostructure is investigated by X-ray photoelectron spectroscopy(XPS)equipped with an Ar gas cluster ion beam,indicating that Ga pre-layers can lower the inter-face formation energy and the bond that is formed is more stable.These results suggest that Ga-riched pre-layers are more con-ducive to the GaP nucleation as well as the epitaxial growth of GaP material on Si(100)substrate. | Tieshi Wei Xuefei Li Zhiyun Li Wenxian Yang Yuanyuan Wu Zhiwei Xing Shulong Lu | 2022 | Journal of Semiconductors2022，43，12： | 0 |
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