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23篇 您的检索式：作者名="STRITZKER B"

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	题名	作者	年代	出处	被引量
1	Optic Phonon Modes and Super- conductivity in α Ohase(Ti,Zr)-(H,D) Alloys显示文摘	Hempelmann R Richter D Stritzker B	1982	J Phys F1982，12，1：	1
2	Pulsed laser deposition and characterization of perovskite thin films on various substrates显示文摘	BIEGEL W KLARMANN R STRITZKER B	2000	Applied Surface Science2000，168，：	1
3	Measurement of latlic temperature of silicon during pulsed laser annealing显示文摘	Stritzker B Pospieszczyk A Tagle J A	1981	Phys Rev Lett1981，47，：	1
4	Bias Assisted Growth on Diamond Single Crystals 显示文摘	Schreck M Grunick C Haug C Brenn R Stritzker B	2002	Diamond and Related Materials2002，11，：	1
5	Field Induced Photoluminescence Quenching and Enhancement of CdSe Nanocrystals Embedded in SiO2 显示文摘	Achtstein A W Karl H Stritzker B	2006	Appl Phys Lett2006，89，06：	1
6	Orientation dependent sputter yield of aluminum 显示文摘	Manova D Schreck M Mandl S Stritzker B Rauschenbach B	2002	Surface and Coatings Technology2002，7275，：	1
7	显示文摘	Worz B Heinrich A Stritzker B	2005	Physica C2005，418，：	1
8	Combinatorial ionbeam synthesis of CdSxSe1-xnanocrystals显示文摘	Huber P Karl H Stritzker B	2006	Applied Surface Science2006，252，：	1
9	Mechanical properties of a-C : H films prepared by plasma decomposition of Gz H2 显示文摘	Jiang X Reichelt K Stritzker B	1990	J Appl Phys1990，68，3：	1
10	显示文摘	Sternschulte H Schreck M Stritzker B	2000	Diamond and Related Materials2000，9，：	1
11	Measurement of Lattice Temperature of Silicon During Pulsed Laser Annealing 显示文摘	Stritzker B Pospieszczyk A Tagle J A	1981	Phys Rev Lett1981，47，：	1
12	Diamond/Ir/SrTiO3 : A Material Combination for Improved Heteroepitaxial Diamond Films 显示文摘	Schreck M Roll H Stritzker B	1999	Appl Phys Lett1999，74，5：	1
13	Mechanisms in the ion beam synthesis of SiC buried layers in silicon 显示文摘	Lindner J K N Stritzker B	1999	Nucl Instr Meth Phys Res B1999，148，：	1
14	Ion beam synthesis of SiC layers in SIMOX material 显示文摘	Gotz B Lindner J K N Stritzker B	1997	Nucl Instr Meth Phys Res B1997，，：	1
15	In situ characterization of CVD diamond growth under H2S addition by optical emission spectroscopy, mass spectroscopy, mass spectroscopy and laser reflection interferometry 显示文摘	STERNSCHULTE H SCHRECK M STRITZKER B	2002	Diamond and Related Materials2002，11，：	1
16	Measurement of lattice temperature of silicon during pulsed laser annealing显示文摘	Pospieszczyk A Tagle J A	1981	Phys Rev Lett1981，47，5：	1
17	Ion beam synthesis of SiC layers in SiMOX material显示文摘	GOETZ B LINDNER J K N STRITZKER B	1997	Nucl Instrum Methods Phys Res B1997，，：	1
18	Homoepitaxial Diamond Layers on off-Axis Ib HPHT Substrates:Growth of Thick Films and Characterisation by High-Resolution X-ray Diffraction显示文摘	Bauer T Schreck M Stritzker B	2006	Diamond and Related Materials2006，15，：	1
19	Mechanisms the ion beam synthesis of SiC buried layers in silicon显示文摘	LINDNER J K N STRITZKER B	1999	Nucl Instr and Meth B1999，148，14：	1
20	Limitations of the process window for the bias enhanced nucleation of hetero epitaxial diamond films on silicon in the time domain显示文摘	THURERKH STRITZKER B	1997	J Appl Phys1997，81，7：	1

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