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| 1 | In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor显示文摘Neutron-transmutation doping(NTD)has been demonstrated for the first time in this work for substitutional introduction of tin(Sn)shallow donors into two-dimensional(2D)layered indium selenide(InSe)to manipulate electron transfer and charge carrier dynamics.Multidisciplinary study including density functional theory,transient optical absorption,and FET devices have been carried out to reveal that the field effect electron mobility of the fabricated phototransistor is increased 100-fold due to the smaller electron effective mass and longer electron life time in the Sn-doped InSe.The responsivity of the Sn-doped InSe based phototransistor is accordingly enhanced by about 50 times,being as high as 397 A/W.The results show that NTD is a highly effective and controllable doping method,possessing good compatibility with the semiconductor manufacturing process,even after device fabrication,and can be carried out without introducing any contamination,which is radically different from traditional doping methods. | Zhinan Guo Yonghong Zeng Fanxu Meng Hengze Qu Shengli Zhang Shipeng Hu Sidi Fan Haibo Zeng Rui Cao Paras N.Prasad Dianyuan Fan Han Zhang | 2022 | eLight2022，2，1： | 1 |
| 2 | Interlayer sensitized van der Waals heterojunction photodetector with enhanced performance显示文摘Although photodetection based on two-dimensional(2D)van der Waals(vdWs)P-N heterojunction has attracted extensive attention recently,their low responsivity(R)due to the lack of carrier gain mechanism in reverse bias or zero bias operation hinders their applications in advanced photodetection area.Here,a black phosphorus/rhodamine 6G/molybdenum disulfide(BP/R6G/MoS_(2))photodiode with high responsivity at reverse bias or zero bias has been achieved by using interfacial charge transfer of R6G molecules assembled between heterojunction layers.The formed vdWs interface achieves high performance photoresponse by efficiently separating the additional photogenerated electrons and holes generated by R6G molecules.The devices sensitized by the dye molecule R6G exhibit enhanced photodetection performance without sacrificing the photoresponse speed.Among them,the R increased by 14.8-20.4 times,and the specific detectivity(D^(*))increased by 24.9-34.4 times.The strategy based on interlayer assembly of dye molecules proposed here may pave a new way for realizing high-performance photodetection based on 2D vdWs heterojunctions with high responsivity and fast response speed. | Huide Wang Yonghong Zeng FanXu Meng Rui Cao Yi Liu Zhinan Guo Tingting Wang Haiguo Hu Sidi Fan Yatao Yang SWageh Omar AAl-Hartomy Abul Kalam Yonghong Shao Yu-Jia Zeng Dianyuan Fan Han Zhang | 2023 | Nano Research2023，16，7： | 0 |
| 3 | Fully depleted vdW heterojunction based high performance photovoltaic photodetector显示文摘Van der Waals(vdW)heterojunctions,with their unique electronic and optoelectronic properties,have become promising candidates for photodetector applications.Amplifying the contribution of the depletion region in vdW heterojunction,which would enhance both of the collection efficiency and speed of the photogenerated carriers,presents an effective strategy for achieving high performance vdW heterojunction photodetectors.Herein,a fully depleted vdW heterojunction photodetector is built on two-dimensional(2D)semiconductor materials(GaTe and InSe)layered on a pattered bottom electrode in vertical structure,in which the generation and motion of carriers are exclusively achieved in the depletion region.Attributed to the intrinsic built-in electric field,the elimination of series resistance and the depletion region confinement of carriers,the as-fabricated photodetector exhibits prominent photovoltaic properties with a high open-circuit voltage of 0.465 V,as well as photoresponse characteristics with outstanding responsivity,detectivity and photoresponse speed of 63.7 A/W,3.88×10^(13)Jones,and 32.7 ms respectively.The overall performance of this fully depleted GaTe/InSe vdW heterojunctions photodetectors are ranking high among the top level of 2D materials based photodetectors.It indicates the device architecture can provide new opportunities for the fabrication of high-performance photodetectors. | Yonghong Zeng Fanxu Meng Sidi Fan Pengfei Wang Cuiyun Kou Mingyi Sun Haiguo Hu Rui Cao Swelm Wageh Omar A.Al-Hartomy Abul Kalam Bowen Du Wenchao Ding Songrui Wei Zhinan Guo Qiuliang Wang Han Zhang | 2023 | Journal of Materiomics2023，9，6： | 0 |
| 4 | Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays显示文摘The interface between oxide/oxide layers shows an inhomogeneous charge transport behavior,which reveals a high conductivity owing to interface-doped.One typical example is the hetero-interface between ZnO film and other wide band gap oxides(e.g.,Al_(2)O_(3),TiO_(2),and HfO_(2)).It is thus quite evident that the ZnO/other oxides hetero-interface contains high density electron carriers effectively screening the gate-induced electric field.Thus,an extremely weak gate modulation in ZnO film was showed,resulting in very low on/off ratio of 1.69 in top-gate field-effect-transistor(TG-FET)configuration.So,to extend the usage of ZnO TG-FET is not quite possible toward further practical application.Herein,we clarified the correlation of inhomogeneous region in oxide/oxide hetero-junction by systematically study.Our work suggests that a self-assembly of molecules(SAM)buffer layer is suitable for tuning the inhomogeneous charge transport in ZnO film,which not only reduces the interface trap density,but also effectively enhances the gate electric field modulation at the hetero-interface.We further report the robust fabrication of TG-FET arrays based on ZnO thin film,using an ultra-thin alkylphosphonic acid molecule monolayer as buffer layer.Our device demonstrates a pronounced ultrahigh on/off ratio of≥10^(8),which is 8-order of magnitude higher than that of a device without buffer layer.For the highly reliable arrays,our device exhibits a high yield of over 93%with an average on/off ratio of^10^(7) across the entire wafer scale,mobility(18.5 cm^(2)/(V·s)),an extended bias-stressing(~2,000 s)and long-stability(~150 days)under ambient conditions. | Thanh Luan Phan Dinh Loc Duong Tuan Khanh Chau Sidi Fan Won Tae Kang Thi Suong Le Hyun Yong Song Linfeng Sun Van Tu Vu Min Ji Lee Quoc An Vu Young Hee Lee Woo Jong Yu | 2020 | Nano Research2020，13，11： | 0 |
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