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30篇 您的检索式：作者名="Spetz A"

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	题名	作者	年代	出处	被引量
1	Evaluation of gas mixtures with high temperature gas sensors based on silicon carbide 显示文摘	Arbab A Spetz A Lundstrom I	1994	Sensors and Actuators B1994，，1819：	1
2	Current status of silicon carbide based high-temperature gas sensors 显示文摘	Spetz A L Tobias P Baranzahi A	1999	IEEE Trans Elec Dev1999，46，3：	1
3	Gas sensors for high temperature operation based on metal oxide silicon carbide (MOSiC) devices 显示文摘	Arbab A Spetz A L Lundstrom I	1993	Sensors and Actuators B1993，15，13：	1
4	Response of metal-oxide-silicon carbide sensors to simulated and real exhaust gases显示文摘	Spetz A L Glavmo M	1997	Sensors and Actuators B1997，43，：	1
5	Current status of silicon carbide based high-temperature gas sensors显示文摘	Tobias P Baranzahi A	1999	IEEE Transaction on Electron Devices1999，46，3：	1
6	Nanoparticles as the active element of high-temperature metal-insulator-silicon carbide gas sensors显示文摘	BOHME O SPETZ A L LUNDSTROM I	2001	Advanced Materials2001，13，8：	1
7	High temperature catalytic metal field effect transistors for industrial application显示文摘	TOBIAS P UNEUS L	2000	Sensors and Actuators B2000，70，13：	1
8	A specialist nurse as a resource for family members to patients with brain tumors : An action research study显示文摘	Spetz A Henriksson R Salander P	2008	Cancer Nursing2008，31，4：	1
9	Soil organic matter quality as a link between microbial commtmity structure and vegetation composition along a successional gradient in a boreal forest显示文摘	Merilǎ P Malmivaara-L(a)ms(a) M Spetz P Stark S Vierikko K Derome J Fritze H		0，，02：	1
10	Current status of silicon carbide based high-temperature gas sensors显示文摘	TOBIAS P BARANZAHI A	1999	IEEEE Trans Electron Device1999，46，3：	1
11	Current status of silicon carbide based high-temperature gas sensors显示文摘	SPETZ A L TOBIA P BARANZAHI Z	1999	IEEE Trans On Electron Devices1999，46，3：	1
12	Gas sensors for high temperature based on metal-oxide-silicon carbide (MOSiC) device 显示文摘	Spetz A Lundstrom I	1993	Sens Actuat B1993，，1516：	1
13	Current status of silicon carbide based high-temperature gas sensors 显示文摘	Spetz A L Tobia P Baranzahi Z	1999	IEEE Trans Electron Devices1999，46，3：	1
14	Current status of silicon carbide based high-temperature gas sensors 显示文摘	Tobias P Baranzahi A	1999	IEEE Trans on electron devices1999，46，3：	1
15	Gas sensors for high temperature operation based on metal oxide silicon carbide(MOSiC) devices 显示文摘	Arbab A Spetz A L Lundstrom I	1993	Sens Actuat B1993，15，13：	1
16	How have mandated nurse staffing ratios affected hospitals? Perspectives from California hospital leaders 显示文摘	Chapman S A Spetz J Seago J A	2009	J Healthc Manag2009，54，5：	1
17	Nanoparticles as the active element of high-temperature metal-insulatorsilicon carbide gas sensors显示文摘	BOHME O SPETZ A L LUNDSTROM I	2001	Advanced Materials2001，13，8：	1
18	Treatmenl of mechanical pulp and process wsters with lipase显示文摘	Mustranta A Buchert J Spetz P	2001	Nord Pulp Paper Res J2001，16，2：	1
19	Current Status of Silicon Carbide Based High-Temperature Gas Sensors 显示文摘	Spetz A L Tobia P Baranzahi Z	1999	IEEE Trans On Electron Devices1999，46，3：	1
20	Fast chemical sensing with metal-insulator silicon carbide structures 显示文摘	Tobias P Baranzahi A Spetz A L	1997	IEEE Electron Device Lett1997，18，6：	1

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