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1篇 您的检索式：作者名="Tanu Goyal"

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		题名	作者	年代	出处	被引量
	1	Propagation delay and power dissipation for different aspect ratio of single-walled carbon nanotube bundled TSV显示文摘Through-silicon vias(TSVs) have provided an attractive solution for three-dimensional(3D) integrated devices and circuit technologies with reduced parasitic losses and power dissipation, higher input-output(I/O) density and improved system performance. This paper investigates the propagation delay and average power dissipation of single-walled carbon nanotube bundled TSVs having different via radius and height. Depending on the physical configuration, a comprehensive and accurate analytical model of CNT bundled TSV is employed to represent the via(vertical interconnect access) line of a driver-TSV-load(DTL) system. The via radius and height are used to estimate the bundle aspect ratio(AR) and the cross-sectional area. For a fixed via height, the delay and the power dissipation are reduced up to 96.2% using a SWCNT bundled TSV with ARD300 : 1 in comparison to ARD6 : 1.	Tanu Goyal Manoj Kumar Majumder Brajesh Kumar Kaushik	2015	Journal of Semiconductors2015，36，6：	0

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