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| 1 | Bifunctional copper modified graphitic carbon nitride catalysts for efficient tetracycline removal:Synergy of adsorption and photocatalytic degradation显示文摘In order to efficiently re move tetracycline in wastewater through the synergistic effect of adsorption and photocatalytic degradatio n,a series of novel composite materials(Cu doped g-C_(3)N_(4))were synthesized by two-pot hydrothermal method.It was found that the composite materials with optimized ratio(Cu/CN-1)displayed outstanding adsorption and photocatalytic performance as compared with pure g-C_(3)N_(4) photocatalyst.The removal efficiency of tetracycline(TC,50 mg/L)reached almost 99%within 30 min by Cu/CN-1 through the synergy of adsorption and photocatalysis under visible-light irradiation,which was the highest re moval efficiency ever reported.The adsorption kinetics and isotherms of TC on the Cu/CN-1 were well fitted with the pseudo-second-order kinetic model and Langmuir model,respectively.Moreover,it was confirmed that the main effective reactive groups were O_(2)^·and h^(+) in photocatalytic process.The Cu/CN-1 exhibited high stability and excellent reusability after five cycle experiments.Finally,the mechanism of synergy between Cu and g-C_(3)N_(4) was proposed:on the one hand,the decoration of Cu particles significantly increased the adsorption sites of Cu/CN-1 to tetracycline,on the other hand,the modification of Cu particles effectively inhibits charge recombination and broadens the visible light absorption range of the photocatalyst.This study provided a promising photocatalyst to be used for TC removal in the actual wastewater. | Huijing Wang Jun Zhang Pu Wang Linlin Yin Yu Tian Junjing Li | 2020 | Chinese Chemical Letters2020，31，10： | 2 |
| 2 | Study of city fire fighting long-distance intelligent monitoring system based on agent显示文摘 | Ma Jinqiang Tian Junjing | 2010 | International Symposium on Distributed Computing and Applications to Business Engineering and Science(DCABES)2010，140，： | 1 |
| 3 | Fabrication of dodecagonal pyramid on nitrogen face GaN and its effect on the light extraction显示文摘Wet etching has been widely used in defect evaluation for Ga-face GaN and surface roughness for N-face GaN dodecagonal pyramids has been fabricated on laser-lift-off N-face GaN by hot phosphor acid etching.The dodecagonal pyramid shows twelve facets including six{20-2-3}and six{22-4-5}planes.From cross-sectional TEM image,it is shown that the pyramid corresponds to the top of the edge dislocation.Compared with hexagonal pyramid-surface light emitting diodes(LEDs)etched by commonly used photoelectrochemical(PEC)process in KOH aqueous,the dodecagonal pyramid-surface LEDs show improved light extraction efficiency because of more facets,which effectively reduces the total internal reflection. | QI ShengLi,CHEN ZhiZhong,SUN YongJian,FANG Hao,TAO YueBin,SANG LiWen,TIAN PengFei,DENG JunJing,ZHAO LuBing,YU TongJun,QIN ZhiXin&ZHANG GuoYi State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China | 2010 | Science China(Technological Sciences)2010，53，3： | 0 |
| 4 | Phase reaction of Au/Sn solder bonding for GaN-based vertical structure light emitting diodes显示文摘Au/Sn solder bonding on Si substrates was used to fabricate the GaN-based vertical structure light emitting diodes (VSLEDs). The phase reaction of Au/Sn solder under different bonding conditions was investigated by the measurement of electron back scattering diffraction (EBSD), and the characteristics of VSLED were analyzed by scanning acoustic microscope (SAM), Raman scattering, current-voltage (I-V) and light output-current (L-I) curves. After the bonding process, horizontal stripes of Au/Sn phase (δ phase) and Au5Sn phase (ζ phase) were redirected to vertical stripes, and δ phase tended to move to the solder joint. Sn interstitial diffusion led to the distribution of δ phase and voids in Au/Sn solder, which could be seen in SAM and SEM images. Vertical distribution of the δ phase and ζ phase with proper voids in the Au/Sn bonding layer showed the best bonding quality. Good bonding quality led to little shift of the E2-high mode of Raman spectra peak in GaN after laser lift off (LLO). It also caused more light extraction and forward bias reduction to 2.9 V at 20 mA. | TIAN PengFei, SUN YongJian, CHEN ZhiZhong, QI ShengLi, DENG JunJing, YU TongJun, QIN ZhiXin & ZHANG GuoYi State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China | 2010 | Science China(Technological Sciences)2010，53，2： | 0 |
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