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20篇 您的检索式：作者名="Vetury"

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	题名	作者	年代	出处	被引量
1	The impact of surface states on the DC and RF characteristics of AI- GaN/GaN HEMTs显示文摘	Vetury R Zhang N Q Keller S	2001	IEEE Tran Electron Devices2001，48，3：	1
2	The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs显示文摘	Zhang Naiqain Q Keller Stacia	2001	IEEE Trans Electron Devices2001，48，：	1
3	The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs 显示文摘	Vetury R Zhang N Q Keller S	2001	IEEE Trans Electron Devices2001，48，3：	1
4	The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs显示文摘	Vetury R Zhang N-Q Keller S	2001	IEEE Trans Elec Dev2001，48，3：	1
5	The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs显示文摘	Vetury R Zhang N Q Keller S	2001	IEEE Trans Elec Dev2001，48，3：	1
6	The impact of surface states on the DC and RE characteristics of A1GaN/GaN HFETs 显示文摘	VETURY R ZHANG N Q KELLER S	2001	IEEE TransEleciron De- vices2001，48，3：	1
7	Anisotropic epitaxial lateral growth in GaN selective area epitaxy显示文摘	KAPOLNEK D KELLER S VETURY R	1997	Appl Phys Lett1997，71，：	1
8	Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers显示文摘	KRISHNAMURTHY K VETURY R KELLER S	2000	IEEE J of Solid-State Circuit2000，35，9：	1
9	Ani- sotropic epitaxial lateral growth in GaN selective area epitaxy 显示文摘	KAPOLNEK D KELLER S VETURY R	1997	Applied Physics Letters1997，71，9：	1
10	The Impact of Surface States on the DC and RF Characteristics of AlGaN/GaN HFETs显示文摘	Vetury R Zhang N Q Keller S	2001	IEEE Transactions on Electron Devices2001，48，3：	1
11	The impact of surface states on the DC and RF characteristics of AIGaN/GaN HFETs显示文摘	VETURY R ZHANG N Q KELLER S	2001	IEEE Trans Electron Devices2001，48，3：	1
12	The Impact of Surface States on the DC and RF Characteristics of AIGaN/GaN HFETs 显示文摘	Vetury R Zhang N Q Keller S	2001	IEEE Trans on Electron Devices2001，48，3：	1
13	The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs显示文摘	VETURY R ZHANG N Q KELLER S	2001	IEEE Trans Electron Devices2001，48，3：	1
14	查看详情显示文摘	Smorchkova I P Elsass C R Ibbetson J E Vetury R Heying B Fini P Haus E DenBaars S P Speck J S Mishra U K		0，，：	1
15	Regulation of multiple DNA repair pathways by the Fanconi anemia protein SLX4 显示文摘	Kim Y Spitz GS Veturi U	2012	Blood2012，23，：	1
16	The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs显示文摘	VETURY R ZHANG N Q Q KELLER S	2001	IEEE Transactions on Electron Devices2001，48，3：	1
17	The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs显示文摘	Ramakrishna Vetury Naiqain Q Zhang Stacia Keller	2001	IEEE Trans Electron Devices2001，48，3：	1
18	The impact of surface states on the DC and RF characteristics of AlGaN/GaN HEFTs显示文摘	VETURY R ZHANG N Q KELLER S	2001	IEEE Transaction on Electron Devices2001，48，：	1
19	A preliminary analysis of the morph-ology of lateral canals after root canal filling using a tooth-clearing technique显示文摘	Veturi M Prati C Capelli G	2003	Int Endod J2003，36，1：	1
20	The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFET显示文摘	Vetury R Zhang N Q Keller S	2001	IEEE Transactions on Electron Devices2001，48，3：	1

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