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2篇 您的检索式：作者名="Xuwan Tang"

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		题名	作者	年代	出处	被引量
	1	High-performance asymmetric electrodes photodiode based on Sb/WSe2 heterostructure显示文摘Two-dimensional (2D) van der Waals (vdWs) metal-semiconductor heterostructures with atomically sharp interface and matched work functions have recently attracted great attention due to their unique electronic and optoelectronic properties. Here we report the vapor phase epitaxial growth of large-scale vertical Sb/WSe2 metal-semiconductor vdWs heterostructures with uniform stacking orientation. Compared with the growth on S1O2/S1 substrate, the thick ness of Sb nan osheet on WSe2 can be reduced effectively to mono layer. We con struct Sb-WSe2-Au asymmetric electrodes photodiode based on the Sb/WSe2 heterostructures. Electrical transport measurements indicate that the photodiode show obvious rectifying effect. Optoelectronic characterizations show prominent photoresponse with a high photoresposivity of 364 mA/W, a fast response time of less than 8 ms, a large open-circuit voltage of 0.27 V and a maximum electrical power output of 0.11 nW. The direct growth of high-quality metal-semiconductor vdWs heterostructures may open up new realms in 2D functional electronics and optoelectronics.	Xiao Liu Guangzhuang Sun Peng Chen Junchi Liu Zhengwei Zhang Jia Li Huifang Ma Bei Zhao Ruixia Wu Weiqi Dang Xiangdong Yang Chen Dai Xuwan Tang Zhuojun Chen Lili Miao Xingqiang Liu Bo Li Yuan Liu Xidong Duan	2019	Nano Research2019，12，2：	5
	2	Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions显示文摘The mixed-dimensional integration of two-dimensional (2D) materials with non-2D materials can give rise to prominent advances in performance or function.To date,the mixed-dimensional one-dimensional (1D)/2D heterostructures have been fabricated using various physical assembly approaches.However,direct epitaxial growth method which has notable advantages in preparing large-scale products and obtaining perfect interfaces is rarely investigated.Herein,we demonstrate for the first time the direct synthesis of the 1D/2D mixed-dimensional heterostructures by sequential vapor-phase growth of Sb2Se3 nanowires on WS2 monolayers.X-ray diffraction (XRD) pattern and Raman spectrum confirm the composition of the Sb2Se3/NS2 heterostructures.Transmission electron microscope (TEM) measurement demonstrates high quality of the heterostructures.Electrical transport characterization reveals that Sb2Se3 nanowire exhibits p-type characteristic and that WS2 monolayer exhibits n-type behavior,and that the p-n diode from 1D/2D mixed-dimensional Sb2Se3/WS2 heterostructure possesses obvious current rectification behavior.Optoelectronic measurements of the heterostructures show apparent photovoltaic response with an open-circuit voltage of 0.19 V,photoresponsivity of 1.51 A/W (Vds =5 V) and fast response time of less than 8 ms.The van der Waals epitaxial growth mode of Sb2Se3 nanowires on WS2 monolayers is verified by stripping the Sb2Se3 nanowire from the heterostructures using tape.Together,the direct van der Waals epitaxy opens a facile pathway to 1D/2D mixed-dimensional heterostructures for functional electronic and optoelectronic devices.	Guangzhuang Sun Bo Li Jia Li Zhengwei Zhang Huifang Ma Peng Chen Bei Zhao Ruixia Wu Weiqi Dang Xiangdong Yang Xuwan Tang Chen Dai Ziwei Huang Yuan Liu Xidong Duan Xiangfeng Duan	2019	Nano Research2019，12，5：	2

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