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| 1 | Soil heavy metal pollution from Pb/Zn smelting regions in China and the remediation potential of biomineralization显示文摘Smelting activities pose serious environmental problems due to the local and regional heavy metal pollution in soils they cause. It is therefore important to understand the pollution situation and its source in the contaminated soils. In this paper, data on heavy metal pollution in soils resulting from Pb/Zn smelting(published in the last 10 years) in China was summarized. The heavy metal pollution was analyzed from a macroscopic point of view. The results indicated that Pb, Zn, As and Cd were common contaminants that were present in soils with extremely high concentrations. Because of the extreme carcinogenicity, genotoxicity and neurotoxicity that heavy metals pose, remediation of the soils contaminated by smelting is urgently required. The primary anthropogenic activities contributing to soil pollution in smelting areas and the progressive development of accurate source identification were performed. Due to the advantages of biominerals, the potential of biomineralization for heavy metal contaminated soils was introduced. Furthermore, the prospects of geochemical fraction analysis, combined source identification methods as well as several optimization methods for biomineralization are presented, to provide a reference for pollution investigation and remediation in smelting contaminated soils in the future. | Xinghua Luo Chuan Wu Yongcheng Lin Waichin Li Min Deng Jingqiang Tan Shengguo Xue | 2023 | Journal of Environmental Sciences2023，，3： | 5 |
| 2 | Specific inhibition of cyclin-dependent kinases and cell proliferation by harmine显示文摘 | Yongcheng Song Djohan Kesuma Jian Wang Yu Deng Jinao Duan Jerry H Wang Robert Z Qi | 2004 | Biochemical and Biophysical Research Communications2004，，1： | 1 |
| 3 | Electrically function-switchable magnetic domain-wall memory显示文摘Versatile memory is strongly desired for end users,to protect their information in the information era.In particular,bit-level switchable memory that can be switched from rewritable to read-only function would allow end users to prevent important data being tampered with.However,no such switchable memory has been reported.We demonstrate that the rewritable function can be converted into read-only function by applying a sufficiently large current pulse in a U-shaped domain-wall memory,which comprises an asymmetric Pt/Co/Ru/AlOx heterostructure with strong D zyaloshinskii-Moriya interaction.Wafer-scale switchable magnetic domain-wall memory arrays on 4-inch Si/SiO2 substrate are demonstrated.Furthermore,we confirm that the information can be stored in rewritable or read-only states at bit level according to the security needs of end users.Our work not only provides a solution for personal confidential data,but also paves the way for developing multifunctional spintronic devices. | Yu Sheng Weiyang Wang Yongcheng Deng Yang Ji Houzhi Zheng Kaiyou Wang | 2023 | National Science Review2023，10，10： | 0 |
| 4 | All-electrical switching of a topological non-collinear antiferromagnet at room temperature显示文摘Non-collinear antiferromagnetic Weyl semimetals,combining the advantages of a zero stray field and ultrafast spin dynamics,as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions,have attracted extensive interest.However,the all-electrical control of such systems at room temperature,a crucial step toward practical application,has not been reported.Here,using a small writing current density of around 5×10^(6)A·cm^(-2),we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn_(3)Sn,with a strong readout signal at room temperature in the Si/SiO_(2)/Mn_(3)Sn/AlO_(x)structure,and without external magnetic field or injected spin current.Our simulations reveal that the switching originates from the current-induced intrinsic non-collinear spin-orbit torques in Mn_(3)Sn itself.Our findings pave the way for the development of topological antiferromagnetic spintronics. | Yongcheng Deng Xionghua Liu Yiyuan Chen Zongzheng Du Nai Jiang Chao Shen Enze Zhang Houzhi Zheng Hai-Zhou Lu Kaiyou Wang | 2023 | National Science Review2023，10，2： | 0 |
| 5 | Oscillation of current-induced interfacial spins reorientation in a like-synthetic antiferromagnet/antiferromagnet system显示文摘Antiferromagnets have been attracting tremendous interest in the spintronics community due to their intrinsic appealing properties,such as zero stray field and ultrafast spin dynamics.Recently,the electrical manipulation of bulk properties of antiferromagnets has been widely studied,but exploring the use of antiferromagnetic(AFM)interfacial properties to investigate some key issues in spintronic devices is urgently desired.In this study,the magnetic and spin transport properties mediated by interlayer exchange coupling(IEC)are examined through spin-orbit torque(SOT)-induced tunability of interfacial spins in heavy-metal/like-synthetic antiferromagnet/antiferromagnet heterostructure devices.We found that the exchange bias and coercivity and the critical current density for SOT switching can be modulated by IEC,associating with the oscillation of SOTinduced interfacial spins reorientation at zero field,which can be well understood with the modified Ruderman-Kittel-KasuyaYosida model.Our finding opens a new route for understanding and using the AFM interfacial spins in spintronics. | XiongHua Liu YongCheng Deng XiuKai Lan RunZe Li KaiYou Wang | 2021 | Science China(Physics,Mechanics & Astronomy)2021，64，6： | 0 |
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