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| 1 | Impact of EV load uncertainty on optimal planning for electric vehicle charging station显示文摘With the development of electric vehicles(EV), there is a huge demand for electric vehicle charging stations(EVCS). The utilization of renewable energy sources(RES) in EVCS can not only decrease the energy fluctuation by participating in peakload reduction of the grid, but also reduce the pollution to the environment by cutting down the use of fossil fuels. In this paper,the optimal planning for grid-connected EVCS with RES is studied by considering EV load uncertainty. Nine scenarios are set based on a different characteristic of EV load to reveal the impact of EV load on net present cost(NPC) and to express the relationship between the optimal capacity and energy flow. Moreover, since electricity price also plays an important role in EVCS planning, an economic comparison between different cases with different electricity prices for peak-valley-flat period is carried out. The results reveal the economic benefits of applying RES in EVCS, and demonstrate that EV load with different characteristics would influence the capacity of each device(PV, battery, converter) in the EVCS optimal planning. | LONG YiLin LI Yong WANG YaHui CAO YiJia JIANG Lin ZHOU YiCheng DENG YouYue NAKANISHI Yosuke | 2021 | Science China(Technological Sciences)2021，64，11： | 3 |
| 2 | Integrating Multi-agent Negotiation to Resolve Constraints in Fulfilling Supply Chain Orders显示文摘 | Lin Furen Lin Youyu | 2006 | Electronic Commerce Research and Applications2006，5，4： | 1 |
| 3 | Significantly improved high k dielectric performance:Rare earth oxide as a passivation layer laminated with TiO_(2) film显示文摘In order to achieve a super gate dielectric performance,rare earth oxides featuring for large band gap,good thermodynamic stability and relatively high k value were selected to be laminated with TiO_(2)film to prepare bilayer dielectric films.As an example,the microstructure,morphology,band gap structure and electrical performance of TiO_(2)-Y_(2)O_(3)bilayer films were systematically investigated.Results show that stacking sequence of TiO_(2)and Y_(2)O_(3)sublayers has a significant impact on the dielectric performance and Y_(2)O_(3)film as a passivation layer can effectively improve electrical properties.Besides,the electrical behaviors analysis of TiO_(2)-Y_(2)O_(3),Y_(2)O_(3)-TiO_(2),Y_(2)O_(3)and TiO_(2)samples was carried out by impedance spectra and equivale nt circuit.The result shows that TiO_(2)-Y_(2)O_(3)/Si sample holds the largest internal re sistance of 74665Ωamong four samples.Moreover,the most outstanding properties of Pt/TiO_(2)-Y_(2)O_(3)/Si capacitor are achieved by varying the thickness of sublayers and annealing temperature.500℃-annealed bilayer film with 17 nm-TiO_(2)and 3-nm Y_(2)O_(3)displays a k value of 28.24,which is more than 1.4 times that of current commercial HfO_(2).Further,Schottky emission was determined to be leakage current transport mechanism for TiO_(2)-Y_(2)O_(3)bilayer films.Inspired by this result,the electrical performance of more general Pt/TiO_(2)-REOs/Si MOS capacitors(RE=Sc,La,Ce,Gd and Pr)was measured.The combination of TiO_(2)film and REOs passivation layer with the satisfying performance provides promising candidates for future Si-based integrated circuit(IC). | Shuan Li Weipeng Wang Youyu Lin Linlin Wang Xingguo Li | 2023 | Journal of Rare Earths2023，41，9： | 0 |
| 4 | Prediction of ENSO using multivariable deep learning显示文摘本文基于残差神经网络和观测数据构建了一套深度学习多因子预报测模型,以改进厄尔尼诺-南方涛动(ENSO)的预报.该模型基于最大信息系数进行因子时空特征提取,并根据泰勒图的评估标准可自动确定关键预报因子进行预报.该模型在超前8个月以内的预报性能要优于当前传统的业务预报模式.2011–2018年间,该模型的预报性能优于多模式集成预报的结果.在超前6个月预报时效上,模型预报相关性可达0.82,标准化后的均方根误差仅为0.58°C,多模式集成预报的相关性和标准化后的均方根误差分别为0.70和0.73°C.该模型春季预报障碍问题有所缓解,并且自动选取的关键预报因子可用于解释热带和副热带热动力过程对于ENSO变化的影响. | Yue Chen Xiaomeng Huang Jing-Jia Luo Yanluan Lin Jonathon S.Wright Youyu Lu Xingrong Chen Hua Jiang Pengfei Lin | 2023 | Atmospheric and Oceanic Science Letters2023，16，4： | 0 |
| 5 | A review of rare-earth oxide films as high k dielectrics in MOS devices——Commemorating the 100th anniversary of the birth of Academician Guangxian Xu显示文摘Recently,rare-earth oxide films have attracted more and more attention as gate dielectrics in metaloxide-semiconductor(MOS)devices,showing the advantages of high dielectric constant(k value),large band gap(Eg)and outstanding physical and chemical stability in contact with silicon substrates.This paper reviews the recent development of rare earth oxide-based gate dielectric films.Aiming at the problem that k value of rare earth oxides(REOs)is generally inversely proportio nal to the band gap value,one of the biggest technical obstacles of high k films,we reviewed three strategies reported in recent papers,namely doping modification,nitriding treatment and multilayer composite,which can provide some insights for long-term development of MOS devices in integrated circuit(IC). | Shuan Li Youyu Lin Siyao Tang Lili Feng Xingguo Li | 2021 | Journal of Rare Earths2021，39，2： | 0 |
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