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1篇 您的检索式：作者名="Yuriy Mokrousov"

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		题名	作者	年代	出处	被引量
	1	Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors显示文摘Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications.Here,by referring to effective model analysis,we propose a general scheme for realizing topological magneto-valley phase transitions.More importantly,by using valley-half-semiconducting VSi2N4 as an outstanding example,we investigate sign change of valley-dependent Berry phase effects which drive the change-in-sign valley anomalous transport characteristics via external means such as biaxial strain,electric field,and correlation effects.As a result,this gives rise to quantized versions of valley anomalous transport phenomena.Our findings not only uncover a general framework to control valley degree of freedom,but also motivate further research in the direction of multifunctional quantum devices in valleytronics and spintronics.	Xiaodong Zhou Run-Wu Zhang Zeying Zhang Wanxiang Feng Yuriy Mokrousov Yugui Yao	2021	npj Computational Materials2021，，1：	0

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