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| 1 | Isolation and oral immunogenicity assessment of porcine epidemic diarrhea virus NH-TA2020 strain:One of the predominant strains circulating in China from 2017 to 2021显示文摘Porcine epidemic diarrhea(PED)caused by porcine epidemic diarrhea virus(PEDV)is one of the most devastating diseases in the global pig industry due to its high mortality rate in piglets.Maternal vaccines can effectively enhance the gut-mammary gland-secretory IgA axis to boost lactogenic immunity and passive protection of nursing piglets against PEDV challenge.From 2017 to 2021,we collected 882 diarrhea samples from 303 farms in China to investigate the epidemiology of PEDV.The result showed that about 52.15%(158/303)of the farms were positive for PEDV with an overall detection rate of 63.95%(564/882)of the samples.The S1 fragments of S gene from 104 strains were sequenced for the phylogenetic analysis.A total of 71 PEDV strains(68.27%)sequenced in this study were clustered into the predominant G2c subgroup,while the newly-defined G2d strains(9.62%)were identified in three provinces of China.The NH-TA2020 strain of G2c subgroup was isolated and cultured,and its infection to piglets caused watery diarrhea within 24 h,indicating its strong pathogenicity.Oral administration of NH-TA2020 strain to pregnant gilts stimulated high levels of IgA antibody in colostrum.The piglets fed by the gilts above were challenged with NH-TA2020 strain or CH-HeB-RY-2020 strain from G2d subgroup,and the clinical symptoms and virus shedding were significantly reduced compared to the mock group.Our findings suggest that G2c subgroup is the predominant branch circulating in China from 2017 to 2021.Oral administration of NH-TA2020 enhances maternal IgA and lactogenic immune responses,which confer protection against the homologous and emerging G2d PEDV strains challenges in neonates. | Xiaowen Li Yang Li Jiapei Huang Yali Yao Wenying Zhao Yunjing Zhang Jie Qing Jing Ren Zhong Yan Zewei Wang Xiaofang Hu Duli Kang Hongqiang Liu Zhichun Yan | 2022 | Virologica Sinica2022，37，5： | 6 |
| 2 | Improved Geometric Model of Extensional Fault–bend Folding显示文摘Extensional fault–bend folds, also called rollovers, are one of the most common structures in extensional settings. Numerous studies have shown that oblique simple shear is the most appropriate mechanism for quantitative modeling of geometric relations between normal faults and the strata in their hanging walls. However, the oblique simple shear has a rather serious issue derived from the shear direction, particularly above convex bends. We use geometric and experimental methods to study the deformation of extensional fault–bend folds on convex bends. The results indicate that whether the fault bends are concave or convex, the shear direction of the hanging wall dips toward the main fault. On this basis, we improve the previous geometric model by changing the shear direction above the convex bends. To illustrate basin history, our model highlights the importance of the outer limit of folding instead of the growth axial. Moreover, we propose a new expression for the expansion index that is applicable to the condition of no deposition on the footwall. This model is validated by modeling a natural structure of the East China Sea Basin. | ZHENG Xiaoli HE Guangyu HU Senqing YAO Zewei WANG Hui LIN Lu | 2015 | Acta Geologica Sinica(English Edition)2015，89，6： | 1 |
| 3 | Global seismic tomography reveals remnants of subducted Tethyan oceanic slabs in the deep mantle显示文摘The Tethyan evolution depicts the continuous process of landmasses separating from the Gondwana continent in the south,drifting northwards,and subsequently colliding with the continents in the north over the past 500 million years.In this process,the Tethyan oceans that formed between the landmass and the southern or northern continents underwent growth,evolution,and eventual closure with the early Cenozoic India-Eurasia collision.However,the Tethyan lithosphere did not disappear but rather continued to evolve after entering into the deep Earth.The current position,morphology,and volume of the subducted Tethyan oceanic slabs in the deep mantle record the latest moment of this continuous evolution,providing critical constraints for Tethyan studies.This paper summarizes and analyzes the results of global-scale whole-mantle seismic tomography in the past nearly two decades,revealing a northwest-southeast seismically high-velocity anomaly,which is linearly distributed at depths of 1000–2000 km beneath the Tethyan realm and referred to as the Tethyan anomaly.By searching for an optimal linear combination of previous global seismic tomographic models to best match the known subducted slabs in the upper mantle,we observe that the Tethyan anomaly extends approximately 8700 km in length and 2600 km in width,exhibiting a parallel structure with northern and southern branches.Combining geological records of oceanic subduction initiation and previous geodynamic studies,this study suggests that the main body of the Tethyan anomaly represents the remnants of the subducted Neo-Tethyan oceanic slabs,which subducted from the Late Jurassic to the early Cenozoic.The northern branch consists of subducted slabs from the Neo-Tethys beneath the southern margin of Eurasia,while the southern branch likely reflects the intra-oceanic subducted slabs of Neo-Tethys during the Cretaceous.The western portion of the Tethyan anomaly may reflect remnants of Paleo-Tethys,while the eastern portion,towards India and the Bay of Bengal,shows signs of subduction towards the core-mantle boundary.Finally,this study discusses the future prospects of whole-mantle seismic tomographic studies focusing on the Tethyan realm. | Zewei WANG Jiashun HU Xueyang BAO Chunquan YU Yingjie YANG Xiaofei CHEN | 2023 | Science China Earth Sciences2023，66，12： | 0 |
| 4 | A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance显示文摘A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),SiC superjuction MOSFET(SJ MOSFET)and the conventional SiC MOSFET in this article.In the proposed SiC Hk-SJ-SBD MOSFET,under the combined action of the p-type region and the Hk dielectric layer in the drift region,the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance(Ron,sp).The integrated Schottky barrier diode(SBD)also greatly improves the reverse recovery performance of the device.TCAD simulation results indicate that the Ron,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm^(2)with a 2240 V breakdown voltage(BV),which is more than 72.4%,23%,5.6%lower than that of the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET with the 1950,2220,and 2220V BV,respectively.The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC,which are greatly reduced by more than 74%and 94%in comparison with those of all the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET,due to the integrated SBD in the proposed MOSFET.And the trade-off relationship between the Ron,sp and the BV is also significantly improved compared with that of the conventional MOSFET,Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature,respectively.In addition,compared with conventional SJ SiC MOSFET,the proposed SiC MOSFET has better immunity to charge imbalance,which may bring great application prospects. | Moufu Kong Zewei Hu Ronghe Yan Bo Yi Bingke Zhang Hongqiang Yang | 2023 | Journal of Semiconductors2023，44，5： | 0 |
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