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4篇 您的检索式:作者名="Zexin Tao"
    题名 作者 年代 出处 被引量
1Seroprevalence of Coxsackievirus B3 in Yantai,China显示文摘Zexin Tao Bo Li Aiqiang Xu 2013Japanese joural of infectious Diseases2013,66,6:1
2Self-assembly of multi- layered functional films based on graphene oxide sheets for controlled release显示文摘YUAN Bing ZHU Tao ZHANG Zexin 2011Journal of Materials Chemistry2011,21,10:1
3Progressing our knowledge of enterovirus:Epidemiology,diagnosis,prevention,control,and beyond显示文摘We are thrilled to present this dedicated issue spotlighting enterovirus infections and health in Biosafety and Health.The articles presented in this issue span the broad spectrum of current research in this vital field,providing insights into the epidemiology,diagnostic procedures,and pathogenesis of enterovirus infections.Enteroviruses,a genus of RNA viruses encompassing polioviruses,coxsackieviruses,and echoviruses,play a crucial role in public health.Jing Lul Zexin Tao Yong Zhang 2024Biosafety and Health2024,6,1:0
4Lateral organic-inorganic hybrid Vis-NIR photodetectors based on GaN nanowires promoting photogenerated carriers transfer显示文摘The narrow bandgap of the low-energy near-infrared(NIR)polymer would lead to overlap between adjacent energy levels,which is a major barrier to the preparation of Vis-NIR polymer bulk hetero-junction(BHJ)photodetectors with small responsivity and photocurrent.In this study,a high-performance lateral inorganic-organic hybrid photodetector was constructed to eliminate this barrier by combining GaN nanowires(GaN-NWs)with PDPP3T:PC61BM-based BHJ.In stage one,high-quality GaN-NWs were synthesized by the catalyst-free CVD method.The mechanism for controlling GaN-NWs morphology by adjusting the NH3 flow rate was revealed.In stage two,the GaN-NWs with large electron mobility were used to accelerate the transfer of photogenerated carriers in the BHJ layer.Finally,compared with the BHJ device,the BHJ/GaN device demonstrated obvious improvements in responsivity and photocurrent at the wavelength between 400 and 1000 nm.The responsivity and photocurrent increased over 20-fold at the NIR band of 800e900 nm.Besides,owing to the energy level gradient effect,the BHJ/GaN device has a response speed of 7.8/<5.0 ms,which increases over three orders of magnitude than that of the GaN-NWs-based device(tr/tf:7.1/10.9 s).Therefore,the novel device structure proposed in this work holds great potential for preparing high-performance Vis-NIR photodetectors.Tao Han Zexin Wu Zhilong Deng Xiaofeng Zhang Sidi Yang Cuicui Chen Jiajia Zhu Shufang Ding Chunzhi Jiang 2022Journal of Materiomics2022,8,4:0
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