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您的检索式：作者名="Zongliang Zheng"
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| 1 | Compact Coplanar Epsilon-Negative Antenna with Ultra-Wide Band Character显示文摘In this paper, a compact coplanar epsilon.negative(ENG) antenna is proposed with ultra.wide operation band and small size of 18×11.5 mm2. The proposed antenna is designed based on a coplanar.waveguide(CPW) feeding antenna, and thus the via.free structure is employed to realize the ENG unit cell, which is convenient to tune the frequency of zeroth.order resonance(ZOR) and extends the ZOR bandwidth. The high.order resonant frequencies are achieved and mainly determined by the separate slots that are located between the radiating patch and the ground plane. Adding the left.handed inductance between the radiating patch and ground has slight impact on the high.order resonant frequencies, and then the ultra.wide band is achieved by merging the ZOR bandwidth with the high.order resonant bandwidths. The ground plane primarily works as a matching network for the proposed antenna. Although it generates a low.frequency resonance, the performance is undesirable due to the impedance mismatching. The measured results show that the reflection coefficient, |S11| <.10 d B, is in a wide frequency range from 5.25 to 13 GHz, which covers the upper operation band of UWB communication. Also, the antenna contains relatively stable gains and omni.directional radiation patterns. | Jun Tao Quanyuan Feng Zongliang Zheng | 2017 | China Communications2017，14，2： | 1 |
| 2 | The effect of lateral growth of self-assembled GaN microdisks on UV lasing action显示文摘There are significant differences in the extent of impurity incorporation on different crystallographic directions of GaN microstructures,and the impurity-related deep energy level behavior will have a significant impact on device performance.However,a comprehensive understanding of the effect of lateral growth on device performance has not been achieved due to the lack of comprehensive spatial distribution characterization of the optical behavior and impurity incorporation in GaN microstructures.We present a comprehensive study of the optical behavior and growth mechanism of self-assembled GaN microdisks using nanoscale spatially resolved cathodoluminescence(CL)mapping.We have found a clear growth orientation-dependent optical behavior of the lateral and vertical growth sectors of self-assembled GaN microcrystals.The lateral growth sector,i.e.,the{101¯1}-growth sector,forms six side facets of the microdisk and shows significant near-bandgap emission(NBE)and weak deep energy level luminescence.Cavity effect enhanced emission was found for the first time in such a truncated hexagonal Na-flux GaN microdisk system with an ultra-smooth surface(Ra<0.7 nm)and low stress.The self-assembled microdisk shows significant ultraviolet(UV)lasing action(main lasing peak wavelength 370.9 nm,quality factor 1278,threshold 6×10^(4)μJ/cm^(2))under pulsed optical pumping.We believe that the appearance of UV lasing action may be related to the light limitation on the six side facets of the lateral growth of the GaN microdisk,the high structural quality,the low content of deep energy level defects,the low surface roughness,and the low stress. | Zhiwei Si Zongliang Liu Xiaoxuan Wang Chunxiang Xu Wei Lin Xiaoxuan Luo Feng Li Xiaoming Dong Shunan Zheng Xiaodong Gao Jianfeng Wang Ke Xu | 2023 | Nano Research2023，16，8： | 0 |
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