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39篇 您的检索式：作者名="del ALAMO J A"

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	题名	作者	年代	出处	被引量
1	Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon显示文摘	Fiorenza J G del Alamo J A	2002	IEEE Trans Elec Dev2002，49，4：	1
2	Critical voltage for electrical degradation of GaN high-electron mobility transistors 显示文摘	JOH J DEL ALAMO J A	2008	IEEE Electron Device Lett2008，29，4：	1
3	Nonlinear source and drain resistance in recessed-gate heterostructure field- effect transistors 显示文摘	GREENBERG D R DEL ALAMO J A	1996	IEEE Trans Electrnn Devices1996，43，8：	1
4	A current-transient methodolo- gy for trap analysis for GaN high electron mobility transistors显示文摘	Joh J del Alamo J A	2011	IEEE Tran Electron Devices2011，58，1：	1
5	Im- pact ionization and transport in the InAlAs/n^+-InP HFET 显示文摘	GREENBERG D R DEL ALAMO J A BHAT R	1995	IEEE Trans Electron Devices1995，42，9：	1
6	30-nm InAs PHEMTs WithfT = 644 GHz and fm, = 681 GHz 显示文摘	Kim D-H del Alamo J A	2010	IEEE Electron Device Letters2010，31，8：	1
7	30-nm InAs PHEMTs with fT = 644 GHz and fMAX = 681 GHz 显示文摘	KIM D H del ALAMO J A	2010	IEEE EDL2010，31，8：	1
8	30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff fre-quency of 628 GHz 显示文摘	Kim D-H del Alamo J A	2008	IEEE Electron Device Letters2008，29，8：	1
9	Thremal, electrical and environmental reliability of lnP HEMTs and GaAs PHEMTs 显示文摘	DEL ALAMO J A VILLANUEVA A A	2004	IEEE Trans on ED2004，35，3：	1
10	GaN HEMT reliability 显示文摘	Alamo J A del Joh J	2009	Micro-electronics Reliability2009，49，7：	1
11	Frequency-Dependent Ground- ing System Calculation by Means of a Conventional Nodal Analysis Technique 显示文摘	Otero A F Cidras J del Alamo J L	1999	IEEE Transaction on Power Delivery1999，14，3：	1
12	Impact ioniza- tion in InA1As/InGaAs HFETrs 显示文摘	Moolji A A Bahl S R del Alamo J A	1994	IEEE Electron Device Lett1994，15，8：	1
13	An InA1As/InAs MODFET显示文摘	Eugster C C Broekaert T del Alamo J A	1991	IEEE Electron Devices Lett1991，12，12：	1
14	Experimental comparison of RF power LDMOSFETs on thin-film SOI and BULK Silicon显示文摘	FIORENZA J G DEL ALAMO J A	2002	IEEE Trans Electron Devices2002，49，4：	1
15	Frequency-dependent grounding system calculation by means of a conventional nodal analysis tech- nique显示文摘	Otero A F Cidras J Del Alamo J L	1999	IEEE Transactions on Power Delivery1999，14，3：	1
16	On-state breakdown in power HEMT' s: measurements and modeling显示文摘	SOMERVILLE M H BLANCHARD R DEL ALAMO J A	1999	IEEE Trans on ED1999，46，6：	1
17	A Faraday cage isolation structure for substrate crosstalk suppression显示文摘	J H Wu J Scholvin J A del Alamo K A Jenkins	2001	Microwave and Wireless Components Letters IEEE2001，11，10：	1
18	An insulator-lined silicon substrate-via technology with high aspect ratio显示文摘	J H Wu J Scholvin J A del Alamo	2001	IEEE Transac-tions on Electron Devices2001，48，9：	1
19	Hydrogen degradation of InP HEMTs and GaAs PHEMTs显示文摘	Del Alamo J A Blanclmrd R R Mertens S D	2001	IEICE Trans Electron2001，84，10：	1
20	Frequency-dependent grounding system calculation by means of a conventional nodal analysis technique显示文摘	OTERO A F CIDRAS J DEL ALAMO J L	1999	IEEE Transactions on Power Delivery1999，14，3：	1

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