A NEW TREATMENT FOR INTERFACE OF METAL AND DIELECTRIC IN FDTD METHOD

查看全文 作　　者：Z.D. Qian, B. W. Li, E.G. Wang, G.L. Jia and J.C. He (Key laboratory of National Education Ministry for Electromagnetic Processing of Materials, Northeastern University, Shenyang 110006, China)

出　　处：《Acta Metallurgica Sinica(English Letters)》索引2001年第14卷第1期,共5页

基　　金：the National Natural Science Foundation (GrantNO.5973J080) and by the '973' Key FOundation (Grant No. G1998061510). 摘　　要：A new treatment for interface of metal and dielectric in finite-difference time domain (FDTD) method was presented, further how and why this treatment should be as it is was explained. The FDTD method was developed to compute the low-frequency electromagnetic fields in the metal instead of the traditional high-frequency ones as it was originally proposed. The computational results agreed well with the experimental ones. 关键词：FDTD method, TREATMENT for interface, ELECTROMAGNETIC field, NUMERICAL simulation

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A NEW TREATMENT FOR INTERFACE OF METAL AND DIELECTRIC IN FDTD METHOD

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