Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells

查看全文 作　　者：HE XuLin,ZHANG JingQuan,FENG LiangHuan,WU LiLi,LI Wei,ZENG GuangGen,LEI Zhi,LI Bing & ZHENG JiaGui College of Materials Science and Engineering,Sichuan University,Chengdu 610064,China

出　　处：《Science China(Technological Sciences)》索引2010年第53卷第9期,共5页

基　　金：supported by the National Hi-Tech Research and Development Program of China ('863' Project) (Grant No. 2003AA513010) 摘　　要：CdTe thin film solar cells with a doped-graphite paste back contact layer were studied using admittance spectroscopy technology.The positions and the capture cross sections of energy level in the forbidden band were calculated,which are the important parameters to affect solar cell performance.The results showed that there were three defects in the CdTe thin films solar cells with the doped-graphite paste back contact layer,whose positions in the forbidden band were close to 0.34,0.46 and 0.51 eV,respectively above the valence band,and capture cross sections were 2.23×10-16,2.41×10-14,4.38×10-13 cm2,respectively. 关键词：CDTE SOLAR cells ADMITTANCE spectroscopy deep-level DEFECT

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Admittance spectroscopy characterize graphite paste for back contact of CdTe thin film solar cells

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