Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor

查看全文 作　　者：AN [1]YiRan;LU [1]YiJia;LI [2]DongSan;CHEN [1]YaoSong

机构地区：[1]Department of Mechanics,Peking University,Beijing 100871,China;[2]North Microelectronic Co.Ltd,Beijing 100016,China

出　　处：《Science China(Technological Sciences)》索引2008年第51卷第6期,共9页

摘　　要：More and more importance has been attached to inductively coupled plasma (ICP) in semiconductor manufacture. For a deep understanding of the plasma discharge process in the etching reactor, this study made a three-dimensional simulation on the Ar plasma discharge process with the commercial software CFD-ACE, which is according to the real experiment conditions and data supplied by North Microelec-tronic Corporation. The error of the simulation results is in the range of ±20% with credibility. The numerical results show that the three-dimentional spatial distribu-tion of electron density is reduced from the chamber center to the wall. The distri-bution of electron density, electron temperature and power deposition is related to the shape and placement of the coil. 关键词：inductively coupled plasma ELECTRON density ELECTRON temperature power DEPOSITION

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Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor

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